Impurity Diffusion in Silicon Based on the Pair Diffusion Model and Decrease in Quasi-Vacancy Formation Energy. Part One: Phosphorus

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Impurity Diffusion in Silicon Based on the Pair Diffusion Model and Decrease in Quasi-Vacancy Formation Energy. Part Two : Arsenic
Configuration of a Manufacturing Line for Mixed Production of Ultra-Short TAT LSIs and Low-Cost LSIs
Spectroscopy of Hard X-Rays (2-15 keV) Generated by Focusing Femtosecond Laser on Metal Targets
LSI Delivery Management System Using Lot Sampling Scheduling Method for ASIC Production Line
Low Temperature Recovery of Ru(Ba, Sr)TiO_3/Ru Capacitors Degraded by Forming Gas Annealing
Electrical Properties of (Ba,Sr)TiO_3 Films on Ru Bottom Electrodes Prepared by Electron Cyclotron Resonance Plasma Chemical Vapor Deposition at Extremely Low Temperature and Rapid Thermal Annealing
Electrical Properties of (Ba,Sr)TiO_3 Films on Ru Bottom Electrodes Prepared by ECR Plasma CVD at Extremely Low Temperature and RTA
Low Temperature Deposition of (Ba, Sr)TiO_3 Films by Electron Cyclotron Resonance Plasma Chemical Vapor Deposition
Bulk Boundary Condition for Numerical Solution of Simultaneous Diffusion Equations of Phosphorus and Point Defects in Silicon
One Bond-Type Migration of Phosphorus in Silicon by Interstitialcy Mechanism
Effect of Polishing on Time Dependence of Average Substitutional Impurity Concentration in Dissociative and Kick-Out Mechanisms
Changes of DLTS Spectrum with Gold Concentration and Gold-Diffusion Temperature in N-Type Silicon
Annealing of Supersaturated Low-Temperature Substitutional Gold in Silicon
A Simple Method to Determine λ from Isothermal Capacitance Measurements
Three States of Substitutional Gold in Silicon
Effect of Annealing Method upon Annealing Characteristics of Supersaturated Substitutional Gold in Silicon
Picosecond Pulsed X-Ray Diffraction from a Pulsed Laser Heated Si(111)
Time-Resolved X-ray Shadowgraphy Experiment of Laser Ablation of Aluminum using Laser-Induced Picosecond Pulsed X-rays
Spall behavior of steels under hypervelocity impact
Laser-Induced Shock Compression of Tantalum to 1.7 TPa
Energy-Dispersive Synchrotron Radiation Topographic Observation of InAs/GaAs Lattice-Mismatched Layer
X-ray Penetration Depth for Large Lattice-Mismatched Heteroepitaxial Layer by Dynamical Diffraction Theory using Computer Simulation
Schematic Model for the Migration of Interstitialcy-Type Self-Interstitial Including the Middle State
Enhancement of Electroluminescence Intensity from Dye-Doped Poly(3-Alkylthiophene) Light Emitting Diode with Different Alkyl-Side-Chain Length
Electroluminescent Diodes Utilizing Polysilanes
In-Diffusion and Annealing of Copper in Germanium
Numerical Solutions of Basic Equations for Kick-Out Mechanism of Diffusion
Diffusion Mechanism of Nickel and Point Defects in Silicon
Criterions for Basic Assumptions in Kick-Out Mechanism of Diffusion
The Confirmation of the Surface Effect upon Phosphorus Diffusion into Silicon
Determination of Diffusion Coefficient of Phosphorus in Silicon by Boltzmann-Matano's Method
Impurity Diffusion in Silicon Based on the Pair Diffusion Model and Decrease in Quasi-Vacancy Formation Energy. Part One: Phosphorus
Hydrolysis of Diribonucleoside Monophosphate Diesters Assisted by a Manganese(II) Complex
Effect of Alkaline Earth Metal Ions on the Phosphodiester Hydrolysis of RNA
On the Distinction between the Dissociative and Kick-Out Mechanisms for Site Exchange in Silicon
An On-Line Scheduler for ASIC Manufacturing Line Management
A Flexible and Low-Cost ASIC Line Management Technology Taking Operator's Skill-Level as a Scheduling-Factor into Consideration
A Scalable and Flexible CIM System with Precise and Quick Scheduler for ASIC
Unprecedentedly Fast DNA Hydrolysis by the Synergism of the Cerium(IV)-Praseodymium(III)and the Cerium(IV)-Neodymium(III)Combinations^1
Dinulear Lanthanum (III) Complex for Efficient Hydrolysis of RNA
Solutions of Simultaneous Equations for Oxidation Enhanced and Retarded Diffusions and Oxidation Stacking Fault in Silicon
Two-Time Three-Equation Method for Analysis of Oxidation-Enhanced and -Retarded Diffusions and Growth of Oxidation Stacking Faults in Silicon
Analysis of Oxidation Enhanced and Retarded Diffusions and Growth of Oxidation Stacking Fault in Silicon : Semiconductors and Semiconductor Devices
Decrease in Quasi Vacancy Formation Energy in the Study of Pair Diffusion Model of Group V Impurities in Silicon
Diffusion of Phosphorus in Silicon
General Theory of Phosphorus and Arsenic Diffusions in Silicon
Components of Chemical Reactions in Solids
Chemical Potential of Impurity-Vacancy Pairs in Solids
Effect of a Frenkel Pair Generation-Annihilation Term upon Diffusion Equations of Self-Interstitials and Vacancies

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