Impurity Diffusion in Silicon Based on the Pair Diffusion Model and Decrease in Quasi-Vacancy Formation Energy. Part Two : Arsenic
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1996-01-15
著者
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Arai Eisuke
Ntt Lsi Laboratories
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YOSHIDA Mtasayuki
Kyushu Insitute of Design
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Yoshida Mtasayuki
Kyushu Insitute Of Design:(present Address)yoshida Semiconductor Laboratory
関連論文
- Impurity Diffusion in Silicon Based on the Pair Diffusion Model and Decrease in Quasi-Vacancy Formation Energy. Part Two : Arsenic
- Configuration of a Manufacturing Line for Mixed Production of Ultra-Short TAT LSIs and Low-Cost LSIs
- LSI Delivery Management System Using Lot Sampling Scheduling Method for ASIC Production Line
- Impurity Diffusion in Silicon Based on the Pair Diffusion Model and Decrease in Quasi-Vacancy Formation Energy. Part One: Phosphorus
- An On-Line Scheduler for ASIC Manufacturing Line Management
- A Flexible and Low-Cost ASIC Line Management Technology Taking Operator's Skill-Level as a Scheduling-Factor into Consideration
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