Two-Time Three-Equation Method for Analysis of Oxidation-Enhanced and -Retarded Diffusions and Growth of Oxidation Stacking Faults in Silicon
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概要
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For analysis of oxidation-enhanced and -retarded diffusion (OED and ORD) and oxidation stacking faults (OSF) in Si, two out of the three equations for OED, ORD and OSF were used. The equation for a local equilibrium between self-interstitials and vacancies was also used. Thus three equations were used. Two time values were taken in these three equations. In the previous paper (Jpn. J. Appl. Phys. 27 (1988) 967), the experimental results were modified in order to obtain physically reasonable solutions. But this is not good. In the present work, therefore, the equations were simultaneously solved without modifying experimental results. It was concluded that the equation of OSF should not be used.
- 社団法人応用物理学会の論文
- 1990-01-20
著者
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YOSHIDA Masayuki
Kyushu Institute of Design
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Okino Takahisa
College Of Liberal Arts & Sciences Nippon Bunri University
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