Laser-Induced Shock Compression of Tantalum to 1.7 TPa
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2000-04-15
著者
-
YOSHIDA Masatake
National Institute of Advanced Industrial Science and technology (AIST) Tsukuba Central 5
-
Komeya K
Graduate School Of Environment And Information Sciences Yokohama National Univ.
-
Komeya Katutoshi
Graduate School Of Environment And Information Science Yokohama National University
-
Yoshida M
Functional Materials Research Laboratories Nec Corporation
-
Wakabayashi Kunihiko
Materials And Structures Laboratory Tokyo Institute Of Technology
-
Yoshida Masatake
National Chemical Laboratory For Industry Tsukuba Research Center
-
NAKAMURA Kazutaka
Materials and Structures Laboratory, Tokyo Institute of Technology
-
KONDO Ken-ichi
Materials and Structures Laboratory, Tokyo Institute of Technology
-
Yoshida M
Yoshida Semiconductor Lab. Fukuoka Jpn
-
Kondo K
Tokyo Inst. Technol. Yokohama Jpn
-
Kondo K
Stanley Electric Co. Ltd. Yokohama Jpn
-
Kondo Kazuhiro
Fujitsu Laboratories Ltd.
-
TAKENAKA Hisataka
NTT Advanced Technology Corporation
-
YOSHIDA Masayuki
Kyushu Institute of Design
-
Kondo K
Fujitsu Laboratories Ltd.
-
Fujimoto Yasushi
Materials And Structures Laboratory Tokyo Institute Of Technology
-
Yoshida Masayoshi
Department Of Electronic Engineering Faculty Of Engineering Osaka University
-
Takenaka Hisataka
Ntt Advanced Technology Corp.
-
Tange Tomoyuki
Materials and Structures Laboratory, Tokyo Institute of Technology
-
Yoshida M
National Institute Of Advanced Industrial And Science Technology (aist)
-
HATTORI Shyuhei
Materials and Structures Laboratory, Tokyo Institute of Technology
-
KOZU Naoshi
School of Engineering, Tokyo University
-
TANAKA Kazuo
Faculty of Engineering and Institute of Laser Engineering, Osaka University
-
OZAKI Norimasa
Faculty of Engineering and Institute of Laser Engineering, Osaka University
-
SASATANI Yasufumi
Faculty of Engineering and Institute of Laser Engineering, Osaka University
-
Kozu Naoshi
School Of Engineering Tokyo University
-
Takenaka H
Ntt Advanced Technology Corp.
-
Tange Tomoyuki
Materials And Structures Laboratory Tokyo Institute Of Technology
-
Ozaki Norimasa
Faculty Of Engineering And Institute Of Laser Engineering Osaka University
-
Kondo Ken-ichi
Materials And Structures Laboratory Tokyo Institute Of Technology
-
Hattori Shyuhei
Materials And Structures Laboratory Tokyo Institute Of Technology
-
Fujimoto Y
Department Of Electrical And Electronic Engineering Toyohashi University Of Technology:(present)mats
-
Nakamura K
Materials And Structures Laboratory Tokyo Institute Of Technology
-
Yashiro M
Univ. Tokyo Tokyo
-
Sasatani Yasufumi
Faculty Of Engineering And Institute Of Laser Engineering Osaka University
-
Nakamura Kazutaka
Materials And Structures Laboratory Tokyo Institute Of Technology
関連論文
- Effects of starting composition and carbon content on the formation of Ca-α SiAlON powders by carbothermal reduction–nitridation
- Recent H-mode Results on ECH Plasmas in Heliotron J
- Highly Uniform Si-Doped GaAs Epitaxial Layers Grown by MBE Using a TEG, Arsenic, and Silicon System
- Substrate Temperature Dependence of Carbon Incorporation into GaAs Grown by MBE Using Triethylgallium and As_4
- Highly Uniform, High-Purity GaAs Epitaxial Layer Grown by MBE Using Triethylgallium and Arsenic : Semiconductors and Semiconductor Devices
- GaAs Surface Cleaning with HCl Gas and Hydrogen Mixture for Molecular-Beam-Epitaxial Growth : Semiconductors and Semiconductor Devices
- Effect of Thermal Etching on GaAs Substrate in Molecular Beam Epitaxy
- Threshold Behavior of a Bistable Ferroelectric Liquid Crystal with a Large Tilt Angle in Thick Cells (4-14μm) : Condensed matter
- New Room-Temperature Ferroelectric Liquid Crystals : Material Constants and Electro-Optic Properties
- Low-Frequency Waves in SF_6 Positive Columns Diluted with N_2 Gas
- Experimental study on the attenuation of blast waves by a water layer
- A study of explosion and deformation processes of 155 mm diameter steel shell with confined explosive
- Fracture Resistance and Contact Damage of TiN Particle Reinforced Si_3N_4 Ceramics(Properties (structural and functional),Guest Editors Dedicated to Prof. Gunter Petzow: Modern Trends in Advanced Ceramics)
- Explosion strength of tri-n-butyl phosphate and fuming nitric acid (TBP/FNA) mixture evaluated by underwater explosion test
- Blast wave parameters of PETN with silicon rubber binder
- Development of a 2D eulerian code for reactive shock analysis using CIP scheme
- Critical thickness for detonation propagation in tri-n-butyl phosphate and fuming nitric acid (TBP/FNA) mixtures
- Determination of JWL equation of state parameters by hydrodynamically analytical method and cylinder expansion test
- Attenuation of blast waves by a water column
- Spectroscopy of Hard X-Rays (2-15 keV) Generated by Focusing Femtosecond Laser on Metal Targets
- Tunneling Hot Electron Transistor Using GaAs/AlGaAs Heterojunctions
- Low Temperature Recovery of Ru(Ba, Sr)TiO_3/Ru Capacitors Degraded by Forming Gas Annealing
- Electrical Properties of (Ba,Sr)TiO_3 Films on Ru Bottom Electrodes Prepared by Electron Cyclotron Resonance Plasma Chemical Vapor Deposition at Extremely Low Temperature and Rapid Thermal Annealing
- Electrical Properties of (Ba,Sr)TiO_3 Films on Ru Bottom Electrodes Prepared by ECR Plasma CVD at Extremely Low Temperature and RTA
- Low Temperature Deposition of (Ba, Sr)TiO_3 Films by Electron Cyclotron Resonance Plasma Chemical Vapor Deposition
- Structural and Electrical Characterization of SrTiO_3 Thin Films Prepared by Metal Organic Chemical Vapor Deposition
- Raman Scattering Studies of CuInS_2 Films Grown by RF Ion Plating
- Low-Temperature Deposition of CuIn(S_xSe_)_2 Thin Films by Ionized Cluster Beam Technique
- Growth and Characterization of CuInS_2 Films grown by Rf Ion-Plating
- Effect of H_2 on the Quality of Si-Doped Al_xGa_As Grown by MBE
- NMR study on the formation mechanism of β-SiAlON from zeolite by nitridation using ammonia gas
- Effective Diffusion Coefficient and Controlling Process of P Diffusion in Si Based on the Pair Diffusion Models of Vacancy and Interstitial Mechanisms
- Bulk Boundary Condition for Numerical Solution of Simultaneous Diffusion Equations of Phosphorus and Point Defects in Silicon
- One Bond-Type Migration of Phosphorus in Silicon by Interstitialcy Mechanism
- Changes of DLTS Spectrum with Gold Concentration and Gold-Diffusion Temperature in N-Type Silicon
- Annealing of Supersaturated Low-Temperature Substitutional Gold in Silicon
- A Simple Method to Determine λ from Isothermal Capacitance Measurements
- Three States of Substitutional Gold in Silicon
- Effect of Annealing Method upon Annealing Characteristics of Supersaturated Substitutional Gold in Silicon
- Influence of MBE Growth Conditions on Persistent Photoconductivily Effects in N-AlGaAs and Selectively Doped GaAs/AlGaAs Heterostructures
- Evaluation of Replicated Dynamic Random Access Memory Cell Patterns using X-Ray Lithography
- Effects of Mask Line-and-Space Ratio in Replicating near-0.1-μm Patterns in X-Ray Lithography
- Analysis of Sub-0.15 μm Pattern Replication in Synchrotron Radiation Lithography
- MBE Growth of High-Quality GaAs Using Triethylgallium as a Gallium Source
- Selectively Doped GaAs/ N-Al_Ga_As Heterostructures Grown by Gas-Source MBE : Semiconductors and Semiconductor Devices
- Deep UV Mastering with a Write Compensation Technique Realizing over 20GB/layer Capacity Disc
- Correlation Between Bulk Orderings and Anchoring Structures of Liquid Crystals Studied by Scanning Tunneling Microscopy
- Two Types of Anchoring Structure in Smectic Liquid Crystal Molecules
- Stress-Optical Coefficients in Polycarbonates
- Picosecond Pulsed X-Ray Diffraction from a Pulsed Laser Heated Si(111)
- Time-Resolved X-ray Shadowgraphy Experiment of Laser Ablation of Aluminum using Laser-Induced Picosecond Pulsed X-rays
- Spall behavior of steels under hypervelocity impact
- Laser-Induced Shock Compression of Tantalum to 1.7 TPa
- Energy-Dispersive Synchrotron Radiation Topographic Observation of InAs/GaAs Lattice-Mismatched Layer
- X-ray Penetration Depth for Large Lattice-Mismatched Heteroepitaxial Layer by Dynamical Diffraction Theory using Computer Simulation
- Schematic Model for the Migration of Interstitialcy-Type Self-Interstitial Including the Middle State
- Enhancement of Electroluminescence Intensity from Dye-Doped Poly(3-Alkylthiophene) Light Emitting Diode with Different Alkyl-Side-Chain Length
- Electroluminescent Diodes Utilizing Polysilanes
- Polarity-Dependent Multicolor Organic Electroluminescent Device
- Two-Band Electroluminescent Emission in Organic Electroluminescent Diode with Phthalocyanine Film
- Pulse Response of Electroluminescence in Poly(3-alkylthiophene) Mixed with Fluorescent Dye
- Synthesis of transition metal picrates
- Synthesis of alkaline-earth metal picrates
- Synthesis and properties of alkali metal picrates
- The synthesis of copper picrates
- The synthesis of zinc picrates
- The synthesis of iron picrates
- Anchoring Structure of Binary Mixture of Liquid Crystals Studied by Scanning Tunneling Microscopy
- Ionization Coefficient in Gases under Nonuniform Electric Fields
- Deep UV Mastering Using an All-Solid-State 266 nm Laser for an over 20 GBytes/Layer Capacity Disk
- Enhancement of X-ray Enlission from a Cooled Kr Gas Jet Irradiated by an Ultrashort KrF Laser Pulse : Nuclear Sciences, Plasmas, and Electric Discharges
- Luminescence in β-ZnP_2 at Low Temperatures : Intersystem Spin Conversion of Exciton Polaritons : Condensed Matter: Electronic Properties, etc.
- Laser Wakefield in Low Density Plasma : Fluids, Plasmas, and Electric Discharges
- Si Atomic-Planar-Doping in GaAs Made by Molecular Beam Epitaxy
- A New Heterostructure for 2DEG System with a Si Atomic-Planar-Doped AlAs-GaAs-AlAs Quantum Well Structure Grown by MBE
- Picosecond Time-Resolved X-Ray Diffraction of a Photoexcited Silicon Crystal (Short Note)
- Shock-Induced Electromotive Force in Aqueous Solution of Potassium Fluoride
- Picosecond Time-Resolved X-Ray Diffraction from Si(111) under High-Power Laser Irradiation
- Modeling of the electron kinetics in proportional counters
- 衝撃圧縮法によるSm_2Fe_N_3焼結磁石の作製
- A Samarium-Iron Nitride Magnet Fabricated by Shock-Compaction Technique
- In-Situ Counting of Process-Induced Particles
- Drift Velocities of Electron Swarms in Methane : A Multi-Term Boltzmann Equation Analysis
- Particle Counting in Semiconductor Processing Gas and Apparatus with a New Flow-Cell-Type Laser Particle Counter
- Nitrogen Absorption by Sm_2Fe_(Guest Editors Dedicated to Prof. Gunter Petzow: Modern Trends in Advanced Ceramics)
- Sm_2Fe_-N系のP-C-T特性
- Sm_2Fe_中の窒素の拡散挙動
- Fabrication and wear properties of TiN nanoparticle-dispersed Si_3N_4 ceramics(SiAlons and Non-oxides)
- Wedge-Driven and Miniature Diamond-Anvil Cells for High-Pressure Optical and X-Ray Diffraction Studies
- Influence of coarse particles on microstructure of aluminum nitride sintered body
- Electric Double Layer Capacitor Characteristics of Carbon Blacks Activated by Potassium Hydroxide
- Synthesis of β-SiAlON from a zeolite by reduction nitridation in a mixture of NH_3-C_3H_8
- Shock and Static Compression of Nitrobenzene
- Effect of Oxygen Partial Pressure during Firing on Electrical Properties of Splintered Body Composed of Mn_CoNi_O_4 : Structure and Mechanical and Thermal Properties of Condensed Matter
- Preparation and Electrical Properties of Sintered Bodies Composed of Monophase Spinel Mn_Co_Ni_O_4 (0 ≦ X ≦ 1) Derived from Rock-Salt-Type Oxides
- Sm_2Fe_合金の水素吸収特性
- Effects of Preparation Parameters on EDLC Performance of the Chars from Phenol-resin Prepolymers Containing Ferrocene and Polyethylene Glycols : Part II : Effect of Amount of Polymer Blends
- Effects of Preparation Parameters on EDLC Performance of the Chars from Phenol-resin Prepolymers Containing Ferrocene and Polyethylene Glycols : Part I : Effects of the Molecular Weight of Polyethylene Glycol and the Carbonization Temperature
- Effects of Preparation Parameters on EDLC Performance of the Chars from Phenol-resin Prepolymers Containing Ferrocene and Polyethylene Glycols : Part III : Effect of Heating Rate