MBE Growth of High-Quality GaAs Using Triethylgallium as a Gallium Source

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1986-01-20

著者

• SUGIYAMA Yoshihiro

  Fujitsu Limited

• Sugiyama Y

  Fujitsu Laboratories Ltd.

• Sugiyama Y

  Jst‐crest Ibaraki Jpn

• HIYAMIZU Satoshi

  Graduate School of Engineering Science, Osaka University

• Hiyamizu Satoshi

  Fujitsu Limited

• KONDO Kazuhiro

  Fujitsu Limited

• Komeya Katutoshi

  Graduate School Of Environment And Information Science Yokohama National University

• SASA Shigehiko

  Fujitsu Laboratories Ltd.

• Hiyamizu Satoshi

  Fujitsu Laboratories Limited

• Kondo Kazuhiro

  Fujitsu Laboratories Ltd.

• Kondo K

  Fujitsu Laboratories Ltd.

• ISHIKAWA Hideaki

  Fujitsu Laboratories Ltd.

• Ishikawa T

  Fujitsu Laboratories Ltd.

• Sasa S

  Fujitsu Laboratories Ltd.

• Sugiyama Yoshinobu

  Fujitsu Laboratories Ltd.

• Sasa Shigehiko

  Nanomaterials Microdevices Research Center Osaka Institute Of Technology

• Sugiyama Yoshihiro

  Fujitsu Laboratories Ltd.

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• New Optical Memory Structure Using Self-Assembled InAs Quantum Dots
• Time-Resolved Study of Carrier Transfer among InAs/GaAs Multi-Coupled Quantum Dots
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