Fabrication of Quantum Wire Structures on Non-Planer InP Substrates by Molecular Beam Epitaxy (Special Issue on Quantum Effect Devices and Their Fabrication Technologies)
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概要
- 論文の詳細を見る
The fabrication of InAlAs wire structures and InGaAs quantum wire structures on non-planer InP substrates with truncated ridges by molecular beam epitaxy is demonstrated. Indium-rich InAlAs epitaxial layers grown on top of ridges exhibit self-formation of electron-confining InAlAs wire structures. The InAlAs layers on top of the ridges 1attice-matched to the substrate are obtained by the control of In flux during the growth. The InGaAs quantum wire structures have been fabricated on thus composition-controlled InAlAs barrier layers.The optical properties of the InGaAs quantum wires with composition-controlled InAlAs barrier layer are found to be better than that of the wires without compositional control.
- 社団法人電子情報通信学会の論文
- 1996-11-25
著者
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NAKAGAWA Tadashi
Electrotechnical Laboratory
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Sugiyama Y
Fujitsu Laboratories Ltd.
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SUGAYA Takeyoshi
Electrotechnical Laboratory (ETL)
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SUGIYAMA Yoshinobu
Electrotechnical Laboratory
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Nakagawa Tadashi
Electroinformatics Group Nanoelectronics Research Institute National Institute Of Advanced Industria
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Segawa Yusaburo
Photodynamics Research Center Riken (institute Of Physical And Chemical Research)
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Nakagawa T
Electrotechnical Laboratory
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Nakagawa T
Matsushita Electric Industrial Co. Ltd. Kyoto Jpn
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Nakagawa T
Electroinformatics Group Nanoelectronics Research Institute National Institute Of Advanced Industria
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Sugiyama Yoshinobu
Fujitsu Laboratories Ltd.
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Sugaya Takeyoshi
Electrotechnical Laboratory
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