Extremely High 2DEG Concentration in Selectively Doped In_<0.53>Ga_<0.47>As/N-In_<0.52>Al_<0.48>As Heterostructures Grown by MBE
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1987-01-20
著者
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NAKATA Yoshiaki
Fujitsu Laboratories Ltd.
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SUGIYAMA Yoshihiro
Fujitsu Limited
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Sugiyama Y
Fujitsu Laboratories Ltd.
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Sugiyama Y
Jst‐crest Ibaraki Jpn
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FUJII Toshio
Fujitsu Laboratories Ltd.
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HIYAMIZU Satoshi
Graduate School of Engineering Science, Osaka University
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Nishikawa Y
Toshiba Corp. Kawasaki Jpn
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Hiyamizu Satoshi
Fujitsu Limited
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SASA Shigehiko
Fujitsu Laboratories Ltd.
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Hiyamizu Satoshi
Fujitsu Laboratories Limited
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Fujii Toshio
Fujitsu Laboratories Lid.
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Nakata Yoshinori
Microgravity Materials Science Group Institute For Materials And Chemical Process National Institute
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Sasa S
Fujitsu Laboratories Ltd.
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Nakata Y
Fujitsu Laboratories Ltd.
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Sugiyama Yoshinobu
Fujitsu Laboratories Ltd.
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Sasa Shigehiko
Nanomaterials Microdevices Research Center Osaka Institute Of Technology
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Nakata Yoshiaki
Fujitsu Laboratories Limited
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Sugiyama Yoshihiro
Fujitsu Laboratories Ltd.
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