Crystallographic Properties of Closely Stacked InAs Quantum Dots Investigated by Ion Channeling

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1999-01-30

著者

• YOKOYAMA Naoki

  Fujitsu Laboratories Ltd.

• 武藤 真三

  山梨大学工学部

• NAKATA Yoshiaki

  Fujitsu Laboratories Ltd.

• Nakata Y

  Fujitsu Ltd. Atsugi Jpn

• HAGA Tetsuya

  Department of Applied Physics, Hokkaido University

• MUTO Shunichi

  Department of Applied Physics, Hokkaido University

• ISHIGURE Tsuyoshi

  Department of Applied Physics, Hokkaido University

• Muto Shigeki

  Department Of Physics School Of Science Tokai University

• Haga T

  Ntt Telecommunications Energy Lab. Kanagawa Jpn

• 武藤 真三

  山梨大学

• Nishikawa Y

  Toshiba Corp. Kawasaki Jpn

• Nishikawa Y

  Materials And Devices Research Laboratories Toshiba Corporation

• Nishikawa Yukie

  Advanced Lsi Technology Laboratory Corporate Research & Development Center Toshiba Corporation

• Nishikawa Yukie

  Corporate Research & Development Center Toshiba Corporation

• Muto S

  Kek Ibaraki

• Yokoyama Naoki

  Department of Pediatrics, Kobe University Graduate School of Medicine

• Yokoyama N

  Fujitsu Laboratories Ltd.

• Nakata Yoshiaki

  Fujitsu Laboratories Limited

• Muto Shinzo

  Department Of Electrical Engineering And Computer Science Faculty Of Engineering Yamanashi Universit

• 武藤 俊介

  名古屋大学

• Ishigure Tsuyoshi

  Department Of Applied Physics Hokkaido University

• Yokoyama Naoki

  Institute For Nano Quantum Information Electronics The University Of Tokyo

• Muto Shunichi

  Department of Applied Physics, Hokkaido Univercity, Sapporo 060-8628, Japan

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