Quasi-One-Dimensional Channel GaAs/AlGaAs Modulation Doped FET Using a Corrugated Gate Structure : Special Section : Solid State Devices and Materials 2 : III-V Compound Semiconductors Devices and Materials
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1988-12-20
著者
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YOKOYAMA Naoki
Fujitsu Laboratories Ltd.
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OHSHIMA Toshio
Fujitsu Laboratories Ltd.
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SHIBATOMI Akihiro
Fujitsu Limited
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Shibatomi Akihiro
Fujitsu Laboratories Limited
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Matsuda Manabu
Fujitsu Laboratories Ltd.
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OKADA Makoto
Fujitsu Laboratories Ltd.
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