Development of Electrically Driven Single-Quantum-Dot Device at Optical Fiber Bands
スポンサーリンク
概要
- 論文の詳細を見る
We succeeded in observing the electroluminescence and Stark shift of a single InAs/GaAs quantum dot in the O-band (O-band is a 1.3 μm band which has the lowest dispersion characteristics in optical fiber bands). In order to access a single quantum dot, we fabricated a $ p$–$i$–$n$ diode containing one quantum dot layer with a small ohmic contact area. The electroluminescence of a single exciton ($\lambda=1321.6$ nm) and biexciton ($\lambda=1322.3$ nm) were clearly observed at the center of the O-band at 7 K. This result is the longest wavelength attained up to now. The Stark shift of single quantum dots was also observed at around 1.32 μm at 7 K. These results are promising for the realization of electrically driven single-photon emitters at optical fiber bands.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2006-04-30
著者
-
TAKEMOTO Kazuya
Fujitsu Laboratories Ltd.
-
TAKATSU Motomu
Fujitsu Laboratories Ltd.
-
YOKOYAMA Naoki
Fujitsu Laboratories Ltd.
-
HIROSE Shinichi
Fujitsu Laboratories Ltd.
-
Ishida Satomi
Institute For Nano Quantum Information Electronics University Of Tokyo
-
Tatebayashi Jun
Institute Of Industrial Science The University Of Tokyo
-
Iwamoto Satoshi
Institute For Nano Quantum Information Electronics University Of Tokyo
-
Nakaoka Toshihiro
Institute For Nano Quantum Information Electronics The University Of Tokyo
-
Miyazawa Toshiyuki
Institute For Nano Quantum Information Electronics The University Of Tokyo
-
Arakawa Yasuhiko
Institute For Nano Quantum Information Electronics (nanoquine) The University Of Tokyo
-
Takatsu Motomu
Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197, Japan
-
Usuki Tatsuya
Institute of Industrial Science, The University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
-
Miyazawa Toshiyuki
Institute of Industrial Science, The University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
-
Usuki Tatsuya
Institute for Nano Quantum Information Electronics, The University of Tokyo, 4-6-1 Komaba, Meguro, Tokyo 153-8505, Japan
-
Iwamoto Satoshi
Institute of Industrial Science, The University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
-
Takemoto Kazuya
Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197, Japan
-
Tatebayashi Jun
Institute of Industrial Science, The University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
-
Hirose Shinichi
Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197, Japan
-
Ishida Satomi
Institute of Industrial Science, The University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
-
Iwamoto Satoshi
Institute for Nano Quantum Information Electronics and Institute of Industrial Science, University of Tokyo
関連論文
- Esaki diodes live and learn
- First Demonstration of Electrically Driven 1.55μm Single-Photon Generator
- Single-photon generator for telecom applications
- Photonic Crystal Nanocavity Continuous-wave Laser Operation at Room Temperature
- Development of Electrically Driven Single-Photon Emitter at Optical Fiber Bands
- Single-Photon Generation in the 1.55-μm Optical-Fiber Band from an InAs/InP Quantum Dot
- Observation of Light Emission at-1.5μm from InAs Quantum Dots in Photonic Crystal Microcavity
- Non-classical Photon Emission from a Single InAs/InP Quantum Dot in the 1.3-μm Optical-Fiber Band
- Phonon Assisted Tunneling and P/V-Ratio in a Magnetic Confined Quasi 0D InGaAs/InAlAs Resonant Tunneling Diode
- Size, density, and shape of InAs quantum dots in closely stacked multilayers grown by the Stranski-Krastanow mode
- Lattice Deformation and Ga Diffusion Concerning InAs Self-Assembled Quantum Dots on GaAs(100) as a Function of Growth Interruption Time
- InAs Self-Assembled Quantum Dots Coupled with GaSb Monolayer Quantum Well
- Quantum Dot Infrared Photodetector Using Modulation Doped InAs Self-Assembled Quantum Dots
- Effect of Size Fluctuations on the Photoluminescence Spectral Linewidth of Closely Stacked InAs Self-Assembled Quantum Dot Structures
- Crystallographic Properties of Closely Stacked InAs Quantum Dots Investigated by Ion Channeling
- Threading Dislocations in Multilayer Structure of InAs Self-Assembled Quantum Dots
- Dynamic Properties of InAs Self-Assembled Quantum Dots Evaluated by Capacitance-Voltage Measurements
- Interdiffusion between InAs Quantum Dots and GaAs Matrices
- Narrow Photoluminescemce Line Width of Closely Stacked InAs Self-Assembled Quantum Dot Structures
- Self-Formed InGaAs Quantum Dot Lasers with Multi-Stacked Dot Layer
- New Optical Memory Structure Using Self-Assembled InAs Quantum Dots
- Time-Resolved Study of Carrier Transfer among InAs/GaAs Multi-Coupled Quantum Dots
- Stacked InAs Self-Assembled Quantum Dots on (001) GaAs Grown by Molecular Beam Epitaxy
- InAs/GaAs Multi-Coupled Quantum Dots Structure Enabling High-Intensity, Near-1.3-μm Emission due to Cascade Carrier Tunneling
- Phonon Assisted Tunneling and Peak-to-Valley Ratio in a Magnetically Confined Quasi Zero Dimensional InGaAs/InAlAs Resonant Tunneling Diode
- InGaAs/GaAs Tetrahedral-Shaped Recess Quantum Dot (TSR-QD)Technology (Special Issue on Quantum Effect Devices and Their Fabrication Technologies)
- Stacked InAs Self-Assembled Quantum Dots on (001) GaAs Grown by Molecular Beam Epitaxy
- Novel InGaAs/GaAs Quantum Dot Structures Formed in Tetrahedral-Shaped Recesses on (111) B GaAs Substrate Using Metalorganic Vapor Phase Epitaxy
- Observation of Exciton Transition in 1.3-1.55μm Band from Single InAs/InP Quantum Dots in Mesa Structure
- Quantum Dots Infrared Photodetector Using Modulation Doped InAs Self-Assembled Quantum Dots
- First demonstration of electrically driven 1.55μm single-photon generator (Special issue: Solid state devices and materials)
- Development of Electrically Driven Single-Quantum-Dot Device at Optical Fiber Bands (Special Issue: Solid State Devices & Materials)
- Carbon nanotube technologies for future ULSI via interconnects
- Characterization of Proton-Irradiated InGaAs/GaAs Multiple Quantum Well Structures by Nonresonant Transient Four-Wave Mixing Technique
- Triggered single-photon emission and cross-correlation properties in InAlAs quantum dot
- Photon Antibunching Observed from an InAlAs Single Quantum Dot
- A Resonant-Tunneling Bipolar Transistor (RBT) : A New Functional Device with High Current Gain
- A New Functional, Resonant-Tunneling Hot Electron Transistor (RHET)
- A WSi/TiN/Au Gate Self-Aligned GaAs MESFET with Selectively Grown n^+-Layer using MOCVD
- Tunneling Hot Electron Transistor Using GaAs/AlGaAs Heterojunctions
- Enhanced Optical Properties of High-Density (>10^/cm^2) InAs/AlAs Quantum Dots by Hydrogen Passivation
- Area-Controlled Growth of InAs Quantum Dots by Selective MOCVD
- Lateral Grain Growth of Poly-Si Films with a Specific Orientation by an Excimer Laser Annualing Method
- Ureaplasma urealyticum and Mycoplasma hominis Presence in Umbilical Cord is Associated with Pathogenesis of Funisitis
- Quantification of lysophosphatidylcholines and phosphatidylcholines using liquid chromatography-tandem mass spectrometry in neonatal serum
- Optical Characteristics of Two-Dimensional Photonic Crystal Slab Nanocavities with Self-Assembled InAs Quantum Dots for 1.3μm Light Emission
- Transmission Experiment of Quantum Keys over 50km Using High-Performance Quantum-Dot Single-Photon Source at 1.5μm Wavelength
- Vertical Microcavity Lasers with InGaAs/GaAs Quantum Dots Formed by Spinodal Phase Separation
- Area Density Control of Quantum-Size InGaAs/Ga(Al)As Dots by Metalorganic Chemical Vapor Deposition
- Light Emission from Individual Self-Assembled InAs/GaAs Quantum Dots Excited by Tunneling Current Injection
- High Current Gain AlGaAs/GaAs Heterojunction Bipolar Transistors with Carbon-Doped Base Grown by Gas Source Molecular Beam Epitaxy Using Trimethylamine Alane as the Aluminum Source
- Carbon-Doped-Base AlGaAs/GaAs HBTs Grown by Gas-Source Molecular Beam Epitaxy Using Only Gaseous Sources
- Gas Source MBE Growth of GaAs/AlGaAs Heterojunction Bipolar Transistor with a Carbon Doped Base Using Only Gaseous Sources
- Selective Growth of GaAs by Pulsed-Jet Epitaxy (Special Issue on Heterostructure Devices and Epitaxial Growth Techniques)
- Near-1.3-μm High-Intensity Photoluminescence at Room Temperature by InAs/GaAs Multi-Coupled Quantum Dots
- Tunneling-injection single-photon emitter using charged exciton state (Special issue: Microprocesses and nanotechnology)
- InAsSb Quantum Dots Grown on GaAs Substrates by Molecular Beam Epitaxy
- Enlargement of Poly-Si Film Grain Size by Excimer Laser Annealing and Its Application to High-Performance Poly-Si Thin Film Transistor
- Electric Field Effect in LaTiO_3/SrTiO_3 Heterostructure
- Formation of Sb Nanocrystals in SiO_2 Film Using Ion Implantation Followed by Thermal Annealing
- Electric Field Effect in LaTiO_3/SrTiO_3 Heterostructure
- Investigation of the Spectral Triplet in Strongly Coupled Quantum Dot-Nanocavity System
- Low-Power, High-Speed Integrated Logic with GaAs MOSFET : B-1: GaAs IC
- Evaluation of change of cerebral circulation by SpO_2 in preterm infants with apneic episodes using near infrared spectroscopy
- Gly71Arg mutation of the bilirubin UDP-glucuronosyltransferase 1A1 gene is associated with neonatal hyperbilirubinemia in the Japanese population
- Improving the Uniformity of Poly-Si Films Using a New Excimer Laser Annealing Method for Giant-Microelectronics
- Invited: GaAs X-Band Power FET : A-4: FIELD EFFECT TRANSISTORS (I)
- Two-Photon Control of Biexciton Population in Telecommunication-Band Quantum Dot
- Large Vacuum Rabi Splitting in Single Self-Assembled Quantum Dot-Nanocavity System
- Low-Temperature Synthesis of Graphene and Fabrication of Top-Gated Field Effect Transistors without Using Transfer Processes
- Growth of Epitaxial CeO_2 Films on (1012) Sapphire by Halide Source Plasma Enhanced Chemical Vapor Deposition
- Ramp-edge Josephson Junction with Indium-Tin-Oxide Barrier
- Open-Base Multi-Emitter HBTs with Increased Logic Functions
- Quasi-One-Dimensional Channel GaAs/AlGaAs Modulation Doped FET Using a Corrugated Gate Structure : Special Section : Solid State Devices and Materials 2 : III-V Compound Semiconductors Devices and Materials
- Architecture Evaluation Based on the Datapath Structure and Parallel Constraint (Special Section on VLSI Design and CAD Algorithms)
- A Static Random Access Memory Cell Using a Double-Emitter Resonant-Tunneling Hot Electron Transistor for Gigabit-Plus Memory Applications
- First-Principles Study of Electronic Properties in Si Lattice Matched SiGeC Alloy with a Low C Concentration
- Electron Spin Flip by Antiferromagnetic Coupling between Semiconductor Quantum Dots
- Effect of Silicon Doping Profile on I-V Characteristics of an AlGaAs/GaAs Resonant Tunneling Barrier Structure Grown by MBE
- Effects of the Heating Rate in Alloying of An-Ge to n-Type GaAs on the Ohmic Properties
- A High-Speed Josephson Latching Driver for a Superconducting Single-Flux-Quantum System to Semiconductor System Interface
- Fabrication of a Tantalum-Based Josephson Junction for an X-Ray Detector
- Additivity of the Quantized Conductance of Multiple Parallel Quantum Point Contacts
- Tunneling-Injection Single-Photon Emitter Using Charged Exciton State
- Anisotropic Exciton Rabi Oscillation in Single Telecommunication-Band Quantum Dot
- Metal Organic Chemical Vapor Deposition Growth of High Spectral Quality Site-Controlled InAs Quantum Dots Using In situ Patterning
- Photon Antibunching Observed from an InAlAs Single Quantum Dot
- Enhancement of Light Emission from Silicon by Utilizing Photonic Nanostructures
- Observation of 1.55 μm Light Emission from InAs Quantum Dots in Photonic Crystal Microcavity
- Quantum Dot Infrared Photodetector Using Modulation Doped InAs Self-Assembled Quantum Dots
- Development of Electrically Driven Single-Quantum-Dot Device at Optical Fiber Bands
- Non-classical Photon Emission from a Single InAs/InP Quantum Dot in the 1.3-μm Optical-Fiber Band
- First Demonstration of Electrically Driven 1.55 μm Single-Photon Generator
- Si Quantum Dot Formation with Low-Pressure Chemical Vapor Deposition
- Stacked InAs Self-Assembled Quantum Dots on (001) GaAs Grown by Molecular Beam Epitaxy
- Design of Silicon Photonic Crystal Waveguides for High Gain Raman Amplification Using Two Symmetric Transvers-Electric-Like Slow-Light Modes
- Electro-Mechanical Q Factor Control of Photonic Crystal Nanobeam Cavity
- Resonant-Wavelength Control in Visible-Light Range of Organic Photonic Crystal Nanocavities
- Electron Spin Flip by Antiferromagnetic Coupling between Semiconductor Quantum Dots
- Optical Characteristics of Two-Dimensional Photonic Crystal Slab Nanocavities with Self-Assembled InAs Quantum Dots for 1.3 μm Light Emission