Phonon Assisted Tunneling and P/V-Ratio in a Magnetic Confined Quasi 0D InGaAs/InAlAs Resonant Tunneling Diode
スポンサーリンク
概要
- 論文の詳細を見る
- 1996-08-26
著者
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YOKOYAMA Naoki
Fujitsu Laboratories Ltd.
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Wirner Christoph
Fujitsu Ltd.:nedo Industrial Technology Researcher
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Wirner Christoph
Fujitsu Ltd.
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AWANO Yuji
Fujitsu Ltd.
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FUTATSUGI Toshiro
Fujitsu Laboratories Ltd.
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NAKAGAWA Tadashi
Electrotechnical Laboratory
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BANDO Hiroshi
Electrotechnical Laboratory
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MUTO Shunichi
Hokkaido University, Faculty of Engineering
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Bando Hiroshi
Elecltrotechnical Laboratory
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Muto Shigeki
Department Of Physics School Of Science Tokai University
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NAKAGAWA Takahide
RIKEN
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Awano Yuji
Fujitsu Lab. Ltd. Kanagawa Jpn
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Awano Y
Fujitsu Ltd. Atsugi Jpn
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Awano Yuji
Fujitsu Laboratories Ltd.
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武藤 真三
山梨大学
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Nakagawa T
Riken
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Muto S
Kek Ibaraki
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Yokoyama Naoki
Department of Pediatrics, Kobe University Graduate School of Medicine
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Nakagawa Tadashi
Electroinformatics Group Nanoelectronics Research Institute National Institute Of Advanced Industria
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Nakagawa T
Matsushita Electric Industrial Co. Ltd. Kyoto Jpn
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Yokoyama N
Fujitsu Laboratories Ltd.
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Bando Hiroshi
First Department Of Internal Medicine School Of Medicine The University Of Tokushima
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Futatsugi T
Fujitsu Laboratories Ltd.
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Bandou Hiroyuki
Faculty Of Engineering Chiba University
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Yokoyama Naoki
Institute For Nano Quantum Information Electronics The University Of Tokyo
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