Characterization of Proton-Irradiated InGaAs/GaAs Multiple Quantum Well Structures by Nonresonant Transient Four-Wave Mixing Technique
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2000-10-15
著者
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SHIMURA Tsutomu
Institute of Industrial Science, University of Tokyo
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KURODA Kazuo
Institute of Industrial Science, University of Tokyo
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IWAMOTO Satoshi
Institute of Industrial Science, Research Center for Advanced Science and Technology, and Nanoelectr
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ARAKAWA Yasuhiko
Research Center for Advanced Science and Technology, University of Tokyo
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NISHIOKA Masao
Institute of Industrial Science, University of Tokyo
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荒川 泰彦
東大生研
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志村 努
東大 生産技研
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Fukutani Katsuyuki
Institute of Industrial Science, The University of Tokyo
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Shimura Tsutomu
Institute Of Industrial Science University Of Tokyo
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JARASIUNAS Kestutis
Institute of Material Science and Applied Research, Vilnius University
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MIZEIKIS Vygantas
Institute of Material Science and Applied Research, Vilnius University
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SOMEYA Takao
Institute of Industrial Science, University of Tokyo
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Arakawa Yasuhiko
Research Center For Advanced Science And Technology And Institute Of Industrial Science University O
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Someya Takao
Institute Of Industrial Science University Of Tokyo
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Kuroda K
Department Of Pharmacy Takarazuka City Hospital
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Nishioka Masao
Institute Of Industrial Science University Of Tokyo
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MIZEIKIS Vygantas
Research Institute for Electronic Science, Hokkaido University
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Kuroda Kazuo
Institute Of Industrial Science University Of Tokyo
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Fukutani Katsuyuki
Institute For Industrial Science The University Of Tokyo
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Jarasiunas Kestutis
Institute Of Material Science And Applied Research Vilnius University
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Nishioka M
Institute Of Industrial Science University Of Tokyo
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Iwamoto Satoshi
Institute For Nano Quantum Information Electronics University Of Tokyo
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Mizeikis Vygantas
Research Institute For Electronic Science Hokkaido University
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Kuroda Kazuo
Institute Of Industrial Science Umversity Of Tokyo
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Iwamoto Satoshi
Institute of Industrial Science, University of Tokyo
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Iwamoto Satoshi
Institute for Nano Quantum Information Electronics and Institute of Industrial Science, University of Tokyo
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