Esaki diodes live and learn

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概要

• 論文の詳細を見る

• We report, as the result of shelf-life tests for Esaki diodes, the observation of minute but tangible reductions in the tunnel current after the lapse of half a century. The reduction could be attributed to 0.25% widening in the tunnel path.(Contributed by Leo ESAKI, M.J.A.)

著者

• IWAMOTO Satoshi

  Institute of Industrial Science, Research Center for Advanced Science and Technology, and Nanoelectr

• ARAKAWA Yasuhiko

  Institute of Industrial Science, Research Center for Advanced Science and Technology, and Nanoelectr

• Esaki Leo

  The Science and Technology Promotion Foundation of Ibaraki

• Kitamura Masatoshi

  Institute for Nano Quantum Information Electronics, The University of Tokyo

• Esaki Leo

  Yokohama Coll. Of Pharmacy

• Iwamoto Satoshi

  Institute Of Industrial Science Research Center For Advanced Science And Technology And Nanoelectron

• Arakawa Yasuhiko

  Institute For Nano Quantum Information Electronics The University Of Tokyo

• Iwamoto Satoshi

  Institute For Nano Quantum Information Electronics University Of Tokyo

• Kitamura Masatoshi

  Institute For Nano Quantum Information Electronics University Of Tokyo

• Arakawa Yasuhiko

  Institute For Nano Quantum Information Electronics And Institute Of Industrial Science The Universit

• Kitamura Masatoshi

  Institute For Nano Quantum Information Electronics And Institute Of Industrial Science The Universit

• Kitamura Masatoshi

  Institute For Nano Quantum Information Electronics (nanoquine) The University Of Tokyo

• Arakawa Yasuhiko

  Institute For Nano Quantum Information Electronics (nanoquine) The University Of Tokyo

• ARAKAWA Yasuhiko

  Institute for Nano Quantum Information Electronics, The University of Tokyo

• IWAMOTO Satoshi

  Institute for Nano Quantum Information Electronics, The University of Tokyo

• Iwamoto Satoshi

  Institute for Nano Quantum Information Electronics and Institute of Industrial Science, University of Tokyo

関連論文

• Esaki diodes live and learn
• Photonic Crystal Nanocavity Continuous-wave Laser Operation at Room Temperature
• Development of Electrically Driven Single-Photon Emitter at Optical Fiber Bands
• Single-Photon Generation in the 1.55-μm Optical-Fiber Band from an InAs/InP Quantum Dot
• Observation of Light Emission at-1.5μm from InAs Quantum Dots in Photonic Crystal Microcavity
• Non-classical Photon Emission from a Single InAs/InP Quantum Dot in the 1.3-μm Optical-Fiber Band
• Differential Absorption in InGaN Multiple Quantum Wells and Epilayers Induced by Blue-Violet Laser Diode
• 高Q値3次元フォトニック結晶ナノ共振器におけるレーザ発振(量子効果デバイス(光信号処理、LD、光増幅、変調等)と集積化技術、一般「材料デバイスサマーミーティング」)
• 高Q値3次元フォトニック結晶ナノ共振器におけるレーザ発振(量子効果デバイス(光信号処理、LD、光増幅、変調等)と集積化技術、一般「材料デバイスサマーミーティング」)
• シリコン上1.3μm量子ドットレーザ--光LSI融合システム構築に向けて
• ウェハ融着によるSi基板上1.3μm InAs/GaAs量子ドットレーザ(光部品・電子デバイス実装技術,一般)
• ウェハ融着によるSi基板上1.3μm InAs/GaAs量子ドットレーザ(光部品・電子デバイス実装技術,一般)
• ウェハ融着によるSi基板上1.3μm InAs/GaAs量子ドットレーザ(光部品・電子デバイス実装技術,一般)
• ウェハ融着によるSi基板上1.3μm InAs/GaAs量子ドットレーザ(光部品・電子デバイス実装技術,一般)
• Characterization of Proton-Irradiated InGaAs/GaAs Multiple Quantum Well Structures by Nonresonant Transient Four-Wave Mixing Technique
• Temperature-Insensitive Eye-Opening under 10-Gb/s Modulation of 1.3-μm P-Doped Quantum-Dot Lasers without Current Adjustments
• Density Control of GaSb/GaAs Self-assembled Quantum Dots (〜25nm) Grown by Molecular Beam Epitaxy
• Observation of 1.55μm Light Emission from InAs Quantum Dots in Photonic Crystal Microcavity
• Optical Characteristics of Two-Dimensional Photonic Crystal Slab Nanocavities with Self-Assembled InAs Quantum Dots for 1.3μm Light Emission
• Transmission Experiment of Quantum Keys over 50km Using High-Performance Quantum-Dot Single-Photon Source at 1.5μm Wavelength
• Vertical Microcavity Lasers with InGaAs/GaAs Quantum Dots Formed by Spinodal Phase Separation
• Area Density Control of Quantum-Size InGaAs/Ga(Al)As Dots by Metalorganic Chemical Vapor Deposition
• Light Emission from Individual Self-Assembled InAs/GaAs Quantum Dots Excited by Tunneling Current Injection
• Formation of InGaAs Quantum Dots on GaAs Multi-Atomic Steps by Metalorganic Chemical Vapor Deposition Growth
• InAsSb Quantum Dots Grown on GaAs Substrates by Molecular Beam Epitaxy
• Defect Modes in Two-Dimensional Triamgular Photonic Crystals
• Lasing Emission from an In_Ga_N Vertical Cavity Surface Emitting Laser
• Phototransistors Using Point Contact Structures
• Phototransistors Using Point Contact Structures
• Direct Observation of Electron Jet from a Point Contact
• Tarahertz Emission from Quantum Beats in Coupled Quantum Wells
• Terahertz Emission from Quantum Beats in Coupled Quantum Wells
• Investigation of the Spectral Triplet in Strongly Coupled Quantum Dot-Nanocavity System
• Below-Gap Spectroscopy of Undoped GaAs/AlGaAs Quantum Wells by Two-Wavelength Excited Photoluminescene
• Spontaneous Emission Characteristics of Quantum Well Lasers in Strong Magnetic Fields : An Approach to Quantum-Well-Box Light Source
• Fabrication of InGaAs Strained Quantum Wire Structures Using Selective-Area Metal-Organic Chemical Vapor Deposition Growth
• Two-Photon Control of Biexciton Population in Telecommunication-Band Quantum Dot
• Large Vacuum Rabi Splitting in Single Self-Assembled Quantum Dot-Nanocavity System
• Resonant-Wavelength Control in Visible-Light Range of Organic Photonic Crystal Nanocavities (Selected Topics in Applied Physics(5)Photonic Crystals and Related Photonic Nanostructures)
• Enhanced Luminance Efficiency of Organic Light-Emitting Diodes with Two-Dimensional Photonic Crystals
• Enhanced Luminance Efficiency from Organic Light-Emitting Diodes with 2D Photonic Crystal
• Fabrication of Single-Electron Transistor Composed of a Self-Assembled Quantum Dot and Nanogap Electrode by Atomic Force Microscope Local Oxidation
• Lifetime of Confined LO Phonons in Quantum Dots and Its Impact on Phonon Bottleneck Issue
• Growth Condition Dependence of the Photoluminescence Properties of In_xGa_N/In_yGa_N Multiple Quantum Wells Grown by MOCVD
• High Current-Gain Cutoff Frequencies above 10 MHz in n-Channel C60 and p-Channel Pentacene Thin-Film Transistors
• Differential Absorption in InGaN Multiple Quantum Wells and Epilayers Induced by Blue-Violet Laser Diode
• Complementary Two-input NAND Gates with Low-voltage-operating Organic Transistors on Plastic Substrates
• High-Frequency Organic Complementary Ring Oscillator Operating up to 200kHz
• Cross Sectional Shape Dependence of Quantum Wire Band Structures and Optical Matrix Elements
• Lasing Oscillation of Vertical Microcavity Quantum Dot Lasers
• Growth and Optical Properties of Self-Assembled Quantum Dots for Semiconductor Lasers with Confined Electrons and Photons (Special Issue on Quantum Effect Divices and Their Fabrication Technologies)
• Localization of Photons in Two-Dimensional Triangular Lattices with Periodic Defects
• Tunneling-Injection Single-Photon Emitter Using Charged Exciton State
• 量子ドット・フォトニック結晶ナノレーザー : 単一人工原子レーザーを中心にして
• 半導体直接融着によるSi基板上1.3μm InAs/GaAs量子ドットレーザ(光部品・電子デバイス実装技術,一般)
• 半導体直接融着によるSi基板上1.3μm InAs/GaAs量子ドットレーザ(光部品・電子デバイス実装技術,一般)
• 半導体直接融着によるSi基板上1.3μm InAs/GaAs量子ドットレーザ(光部品・電子デバイス実装技術,一般)
• 半導体直接融着によるSi基板上1.3μm InAs/GaAs量子ドットレーザ(光部品・電子デバイス実装技術,一般)
• 次世代太陽光発電の展望 : 量子ドット太陽電池を中心にして
• Fine and Large Coulomb Diamonds in a Silicon Quantum Dot
• Novel Solution Process for High-Mobility C_ Fullerene Field-Effect Transistors
• C-4-1 ウェハ融着によるSi基板上1.3μm帯InAs/GaAs量子ドットレーザ(C-4.レーザ・量子エレクトロニクス,一般セッション)
• GaNナノワイヤの有機金属気相成長法による形成と単一光子発生器への応用(窒化物半導体光・電子デバイス・材料,関連技術,及び一般)
• GaNナノワイヤの有機金属気相成長法による形成と単一光子発生器への応用(窒化物半導体光・電子デバイス・材料,関連技術,及び一般)
• GaNナノワイヤの有機金属気相成長法による形成と単一光子発生器への応用(窒化物半導体光・電子デバイス・材料,関連技術,及び一般)
• Metal Organic Chemical Vapor Deposition Growth of High Spectral Quality Site-Controlled InAs Quantum Dots Using In situ Patterning
• Solution-Processed C Single-Crystal Field-Effect Transistors (Special Issue : Applied Physics on Materials Research)
• 量子ドット太陽電池研究の展開
• Solvent Dependence of Vacuum-Dried C60 Thin-Film Transistors
• Enhancement of Light Emission from Silicon by Utilizing Photonic Nanostructures
• Photoluminescence Excitation Spectroscopy on Single GaN Quantum Dots
• 通信波長帯量子ドットを用いた励起子状態のコヒーレント制御(量子光学,非線形光学,超高速現象,レーザ基礎,及び一般)
• Development of Electrically Driven Single-Quantum-Dot Device at Optical Fiber Bands
• Non-classical Photon Emission from a Single InAs/InP Quantum Dot in the 1.3-μm Optical-Fiber Band
• Direct Observation of Electron Jet from a Point Contact
• Temperature-Insensitive Eye-Opening under 10-Gb/s Modulation of 1.3-μm P-Doped Quantum-Dot Lasers without Current Adjustments
• Internal Strain of Self-Assembled InxGa1-xAs Quantum Dots Calculated to Realize Transverse-Magnetic-Mode-Sensitive Interband Optical Transition at Wavelengths of 1.5 μm bands
• Growth of Columnar Quantum Dots by Metalorganic Vapor-Phase Epitaxy for Semiconductor Optical Amplifiers
• Si Waveguide-Integrated Metal--Semiconductor--Metal and p--i--n-Type Ge Photodiodes Using Si-Capping Layer
• Design of Silicon Photonic Crystal Waveguides for High Gain Raman Amplification Using Two Symmetric Transvers-Electric-Like Slow-Light Modes
• Electro-Mechanical Q Factor Control of Photonic Crystal Nanobeam Cavity
• Dual Function of Single Electron Transistor Coupled with Double Quantum Dot: Gating and Charge Sensing
• Resonant-Wavelength Control in Visible-Light Range of Organic Photonic Crystal Nanocavities
• Temperature Dependent Photoluminescence Excitation Spectroscopy of GaN Quantum Dots in Site Controlled GaN/AlGaN Nanowires
• High-Temperature 1.3 μm InAs/GaAs Quantum Dot Lasers on Si Substrates Fabricated by Wafer Bonding
• Optical Control of Transmittance by Photo-Induced Absorption Effect in InGaN/GaN Structures
• Microphotoluminescence Intensity Images of InGaN Single Quantum Wells
• Advances in High-Density Inter-Chip Interconnects with Photonic Wiring
• Design of Silicon Photonic Crystal Waveguides for High Gain Raman Amplification Using Two Symmetric Transvers-Electric-Like Slow-Light Modes (Special Issue : Solid State Devices and Materials)
• Optical Characteristics of Two-Dimensional Photonic Crystal Slab Nanocavities with Self-Assembled InAs Quantum Dots for 1.3 μm Light Emission
• Dual Function of Single Electron Transistor Coupled with Double Quantum Dot : Gating and Charge Sensing (Special Issue : Solid State Devices and Materials)
• Novel III-V/Si hybrid laser structures with current injection across conductive wafer-bonded heterointerfaces: A proposal and analysis
• ウェハ接合によるシリコン基板上量子ドットレーザの進展(半導体レーザ関連技術,及び一般)
• C-3-17 Observation of spontaneous Raman scattering in silicon grating waveguides
• Temperature Dependent Photoluminescence Excitation Spectroscopy of GaN Quantum Dots in Site Controlled GaN/AlGaN Nanowires
• Fabrication of AlGaN Two-Dimensional Photonic Crystal Nanocavities by Selective Thermal Decomposition of GaN
• Photoluminescence Excitation Spectroscopy on Single GaN Quantum Dots

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