Microphotoluminescence Intensity Images of InGaN Single Quantum Wells

概要

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Photoluminescence spectra and microphotoluminescence images were measured at room temperature for an In_<0.06>Ga_<0.94>N single quantum well (SQW) and an In_<0.14>Ga_<0.86>N SQW grown by atmospheric-pressure metalorganic chemical vapor deposition. The spatial homogeneity of their optical properties was studied by means of a photoluminescence intensity imaging technique of typical spatial resolution 150 nm It is found that the microphotoluminescence images taken at different wavelengths show very little difference for the In_<0.06>Ga_<0.94>N SQW, while some parts are complementary for the In_<0.14>Ga_<0.86>N SQW. This result strongly suggests that the additional intensity fluctuation which appears with increasing indium composition is due to phase separation in the InGaN layers.
社団法人応用物理学会の論文
1999-11-01