Transmission Experiment of Quantum Keys over 50km Using High-Performance Quantum-Dot Single-Photon Source at 1.5μm Wavelength
スポンサーリンク
概要
- 論文の詳細を見る
- Japan Society of Applied Physicsの論文
- 2010-09-25
著者
-
TAKEMOTO Kazuya
Fujitsu Laboratories Ltd.
-
YOKOYAMA Naoki
Fujitsu Laboratories Ltd.
-
HIROSE Shinichi
Fujitsu Laboratories Ltd.
-
SAKUMA Yoshiki
National Institute for Materials Science
-
ARAKAWA Yasuhiko
Institute of Industrial Science, Research Center for Advanced Science and Technology, and Nanoelectr
-
MIYAZAWA Toshiyuki
Institute of Industrial Science, The University of Tokyo
-
TAKATSU Motomu
Institute of Industrial Science, The University of Tokyo
-
USUKI Tatsuya
Fujitsu Laboratories Ltd.
-
荒川 泰彦
東大
-
荒川 泰彦
東大生研
-
Usuki Tatsuya
Collaborative Institute For Nano Quantum Information Electronics The University Of Tokyo
-
Usuki Tatsuya
Fujitsu Lab. Ltd. Atsugi Jpn
-
Takatsu Motomu
Faculty Of Engineering University Of Tokyo
-
Sakuma Y
Fujitsu Laboratories Ltd.
-
Sakuma Yoshiki
National Inst. Materials Sci.(nims) Tsukuba Jpn
-
Takemoto Kazuya
Institute Of Physics University Of Tsukuba:(present Address)fujitsu Laboratories Ltd.
-
Arakawa Yasuhiko
Institute For Nano Quantum Information Electronics The University Of Tokyo
-
NAMBU Yoshihiro
Nano Electronics Research Laboratories, NEC Corporation
-
WAKUI Kentaro
Fujitsu Laboratories Ltd.
-
TOMITA Akihisa
Nano Electronics Research Laboratories, NEC Corporation
-
YOROZU Shinichi
Nano Electronics Research Laboratories, NEC Corporation
-
Yorozu Shinichi
Nano Electronics Research Laboratories Nec Corporation
-
Nambu Yoshihiro
Nano Electronics Research Laboratories Nec Corporation
-
荒川 泰彦
東大ナノ量子情報エレクトロニクス研究機構:東大生産研
-
荒川 泰彦
東大生研ncrc:東大先端研
-
Yoshino Ken'ichiro
Nano Electronics Research Laboratories Nec Corporation
-
Arakawa Yasuhiko
Inst. For Nano Quantum Information Electronics The Univ. Of Tokyo
-
Arakawa Yasuhiko
Research Center For Advanced Science And Technology And Institute Of Industrial Science University O
-
Arakawa Yasuhiko
3rd Department Institute Of Industrial Science University Of Tokyo
-
荒川 泰彦
東京大学先端科学技術研究センター・生産技術研究所
-
Yokoyama N
Fujitsu Laboratories Ltd.
-
Tomita Akihisa
Nano Electronics Research Laboratories Nec Corporation
-
荒川 泰彦
Institute For Nano Quantum Information Electronics The University Of Tokyo
-
Takatsu Motomu
Institute For Nano Quantum Information Electronics The University Of Tokyo
-
Miyazawa Toshiyuki
Institute For Nano Quantum Information Electronics The University Of Tokyo
-
Arakawa Yasuhiko
Institute For Nano Quantum Information Electronics And Institute Of Industrial Science The Universit
-
Takemoto Kazuya
Institute For Nano Quantum Information Electronics The University Of Tokyo
-
Yokoyama Naoki
Institute For Nano Quantum Information Electronics The University Of Tokyo
-
Arakawa Yasuhiko
Institute For Nano Quantum Information Electronics (nanoquine) The University Of Tokyo
関連論文
- Esaki diodes live and learn
- First Demonstration of Electrically Driven 1.55μm Single-Photon Generator
- Single-photon generator for telecom applications
- Photonic Crystal Nanocavity Continuous-wave Laser Operation at Room Temperature
- Development of Electrically Driven Single-Photon Emitter at Optical Fiber Bands
- Single-Photon Generation in the 1.55-μm Optical-Fiber Band from an InAs/InP Quantum Dot
- Non-classical Photon Emission from a Single InAs/InP Quantum Dot in the 1.3-μm Optical-Fiber Band
- Differential Absorption in InGaN Multiple Quantum Wells and Epilayers Induced by Blue-Violet Laser Diode
- A 1V Peak-to-Peak Driven 10-Gbps Slow-Light Silicon Mach-Zehnder Modulator Using Cascaded Ring Resonators
- Phonon Assisted Tunneling and P/V-Ratio in a Magnetic Confined Quasi 0D InGaAs/InAlAs Resonant Tunneling Diode
- Size, density, and shape of InAs quantum dots in closely stacked multilayers grown by the Stranski-Krastanow mode
- Lattice Deformation and Ga Diffusion Concerning InAs Self-Assembled Quantum Dots on GaAs(100) as a Function of Growth Interruption Time
- InAs Self-Assembled Quantum Dots Coupled with GaSb Monolayer Quantum Well
- Quantum Dot Infrared Photodetector Using Modulation Doped InAs Self-Assembled Quantum Dots
- Effect of Size Fluctuations on the Photoluminescence Spectral Linewidth of Closely Stacked InAs Self-Assembled Quantum Dot Structures
- Crystallographic Properties of Closely Stacked InAs Quantum Dots Investigated by Ion Channeling
- Threading Dislocations in Multilayer Structure of InAs Self-Assembled Quantum Dots
- Dynamic Properties of InAs Self-Assembled Quantum Dots Evaluated by Capacitance-Voltage Measurements
- Interdiffusion between InAs Quantum Dots and GaAs Matrices
- Narrow Photoluminescemce Line Width of Closely Stacked InAs Self-Assembled Quantum Dot Structures
- Self-Formed InGaAs Quantum Dot Lasers with Multi-Stacked Dot Layer
- New Optical Memory Structure Using Self-Assembled InAs Quantum Dots
- Time-Resolved Study of Carrier Transfer among InAs/GaAs Multi-Coupled Quantum Dots
- Stacked InAs Self-Assembled Quantum Dots on (001) GaAs Grown by Molecular Beam Epitaxy
- InAs/GaAs Multi-Coupled Quantum Dots Structure Enabling High-Intensity, Near-1.3-μm Emission due to Cascade Carrier Tunneling
- Phonon Assisted Tunneling and Peak-to-Valley Ratio in a Magnetically Confined Quasi Zero Dimensional InGaAs/InAlAs Resonant Tunneling Diode
- InGaAs/GaAs Tetrahedral-Shaped Recess Quantum Dot (TSR-QD)Technology (Special Issue on Quantum Effect Devices and Their Fabrication Technologies)
- Stacked InAs Self-Assembled Quantum Dots on (001) GaAs Grown by Molecular Beam Epitaxy
- Novel InGaAs/GaAs Quantum Dot Structures Formed in Tetrahedral-Shaped Recesses on (111) B GaAs Substrate Using Metalorganic Vapor Phase Epitaxy
- Observation of Exciton Transition in 1.3-1.55μm Band from Single InAs/InP Quantum Dots in Mesa Structure
- Quantum Dots Infrared Photodetector Using Modulation Doped InAs Self-Assembled Quantum Dots
- First demonstration of electrically driven 1.55μm single-photon generator (Special issue: Solid state devices and materials)
- Development of Electrically Driven Single-Quantum-Dot Device at Optical Fiber Bands (Special Issue: Solid State Devices & Materials)
- Carbon nanotube technologies for future ULSI via interconnects
- Triggered single-photon emission and cross-correlation properties in InAlAs quantum dot
- Photon Antibunching Observed from an InAlAs Single Quantum Dot
- Temperature-Insensitive Eye-Opening under 10-Gb/s Modulation of 1.3-μm P-Doped Quantum-Dot Lasers without Current Adjustments
- A Resonant-Tunneling Bipolar Transistor (RBT) : A New Functional Device with High Current Gain
- A New Functional, Resonant-Tunneling Hot Electron Transistor (RHET)
- A WSi/TiN/Au Gate Self-Aligned GaAs MESFET with Selectively Grown n^+-Layer using MOCVD
- Tunneling Hot Electron Transistor Using GaAs/AlGaAs Heterojunctions
- Density Control of GaSb/GaAs Self-assembled Quantum Dots (〜25nm) Grown by Molecular Beam Epitaxy
- Ureaplasma urealyticum and Mycoplasma hominis Presence in Umbilical Cord is Associated with Pathogenesis of Funisitis
- Quantification of lysophosphatidylcholines and phosphatidylcholines using liquid chromatography-tandem mass spectrometry in neonatal serum
- Transmission Experiment of Quantum Keys over 50km Using High-Performance Quantum-Dot Single-Photon Source at 1.5μm Wavelength
- Vertical Microcavity Lasers with InGaAs/GaAs Quantum Dots Formed by Spinodal Phase Separation
- Area Density Control of Quantum-Size InGaAs/Ga(Al)As Dots by Metalorganic Chemical Vapor Deposition
- Light Emission from Individual Self-Assembled InAs/GaAs Quantum Dots Excited by Tunneling Current Injection
- Formation of InGaAs Quantum Dots on GaAs Multi-Atomic Steps by Metalorganic Chemical Vapor Deposition Growth
- High Current Gain AlGaAs/GaAs Heterojunction Bipolar Transistors with Carbon-Doped Base Grown by Gas Source Molecular Beam Epitaxy Using Trimethylamine Alane as the Aluminum Source
- Carbon-Doped-Base AlGaAs/GaAs HBTs Grown by Gas-Source Molecular Beam Epitaxy Using Only Gaseous Sources
- Gas Source MBE Growth of GaAs/AlGaAs Heterojunction Bipolar Transistor with a Carbon Doped Base Using Only Gaseous Sources
- Selective Growth of GaAs by Pulsed-Jet Epitaxy (Special Issue on Heterostructure Devices and Epitaxial Growth Techniques)
- Near-1.3-μm High-Intensity Photoluminescence at Room Temperature by InAs/GaAs Multi-Coupled Quantum Dots
- Tunneling-injection single-photon emitter using charged exciton state (Special issue: Microprocesses and nanotechnology)
- Lasing Emission from an In_Ga_N Vertical Cavity Surface Emitting Laser
- Electric Field Effect in LaTiO_3/SrTiO_3 Heterostructure
- Formation of Sb Nanocrystals in SiO_2 Film Using Ion Implantation Followed by Thermal Annealing
- Phototransistors Using Point Contact Structures
- Phototransistors Using Point Contact Structures
- Direct Observation of Electron Jet from a Point Contact
- Electric Field Effect in LaTiO_3/SrTiO_3 Heterostructure
- Tarahertz Emission from Quantum Beats in Coupled Quantum Wells
- Terahertz Emission from Quantum Beats in Coupled Quantum Wells
- GaN Film Fabrication by Near-Atmospheric Plasma-Assisted Chemical Vapor Deposition
- Investigation of the Spectral Triplet in Strongly Coupled Quantum Dot-Nanocavity System
- Below-Gap Spectroscopy of Undoped GaAs/AlGaAs Quantum Wells by Two-Wavelength Excited Photoluminescene
- Spontaneous Emission Characteristics of Quantum Well Lasers in Strong Magnetic Fields : An Approach to Quantum-Well-Box Light Source
- Low-Power, High-Speed Integrated Logic with GaAs MOSFET : B-1: GaAs IC
- Fabrication of InGaAs Strained Quantum Wire Structures Using Selective-Area Metal-Organic Chemical Vapor Deposition Growth
- Evaluation of change of cerebral circulation by SpO_2 in preterm infants with apneic episodes using near infrared spectroscopy
- Gly71Arg mutation of the bilirubin UDP-glucuronosyltransferase 1A1 gene is associated with neonatal hyperbilirubinemia in the Japanese population
- Invited: GaAs X-Band Power FET : A-4: FIELD EFFECT TRANSISTORS (I)
- Two-Photon Control of Biexciton Population in Telecommunication-Band Quantum Dot
- Large Vacuum Rabi Splitting in Single Self-Assembled Quantum Dot-Nanocavity System
- Low-Temperature Synthesis of Graphene and Fabrication of Top-Gated Field Effect Transistors without Using Transfer Processes
- Fabrication of Single-Electron Transistor Composed of a Self-Assembled Quantum Dot and Nanogap Electrode by Atomic Force Microscope Local Oxidation
- Growth of Epitaxial CeO_2 Films on (1012) Sapphire by Halide Source Plasma Enhanced Chemical Vapor Deposition
- Ramp-edge Josephson Junction with Indium-Tin-Oxide Barrier
- Lifetime of Confined LO Phonons in Quantum Dots and Its Impact on Phonon Bottleneck Issue
- Open-Base Multi-Emitter HBTs with Increased Logic Functions
- Quasi-One-Dimensional Channel GaAs/AlGaAs Modulation Doped FET Using a Corrugated Gate Structure : Special Section : Solid State Devices and Materials 2 : III-V Compound Semiconductors Devices and Materials
- Growth Condition Dependence of the Photoluminescence Properties of In_xGa_N/In_yGa_N Multiple Quantum Wells Grown by MOCVD
- A Static Random Access Memory Cell Using a Double-Emitter Resonant-Tunneling Hot Electron Transistor for Gigabit-Plus Memory Applications
- First-Principles Study of Electronic Properties in Si Lattice Matched SiGeC Alloy with a Low C Concentration
- Electron Spin Flip by Antiferromagnetic Coupling between Semiconductor Quantum Dots
- Effect of Silicon Doping Profile on I-V Characteristics of an AlGaAs/GaAs Resonant Tunneling Barrier Structure Grown by MBE
- Effects of the Heating Rate in Alloying of An-Ge to n-Type GaAs on the Ohmic Properties
- A High-Speed Josephson Latching Driver for a Superconducting Single-Flux-Quantum System to Semiconductor System Interface
- Fabrication of a Tantalum-Based Josephson Junction for an X-Ray Detector
- Additivity of the Quantized Conductance of Multiple Parallel Quantum Point Contacts
- Tunneling-Injection Single-Photon Emitter Using Charged Exciton State
- Photon Antibunching Observed from an InAlAs Single Quantum Dot
- Quantum Dot Infrared Photodetector Using Modulation Doped InAs Self-Assembled Quantum Dots
- Development of Electrically Driven Single-Quantum-Dot Device at Optical Fiber Bands
- Non-classical Photon Emission from a Single InAs/InP Quantum Dot in the 1.3-μm Optical-Fiber Band
- First Demonstration of Electrically Driven 1.55 μm Single-Photon Generator
- Si Quantum Dot Formation with Low-Pressure Chemical Vapor Deposition
- Stacked InAs Self-Assembled Quantum Dots on (001) GaAs Grown by Molecular Beam Epitaxy
- Electron Spin Flip by Antiferromagnetic Coupling between Semiconductor Quantum Dots