Lifetime of Confined LO Phonons in Quantum Dots and Its Impact on Phonon Bottleneck Issue

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1999-01-30

著者

• ARAKAWA Yasuhiko

  Institute of Industrial Science, Research Center for Advanced Science and Technology, and Nanoelectr

• Li Xin-qi

  Institute Of Industrial Science University Of Tokyo

• NAKAYAMA Hajime

  Institute of Industrial Science, University of Tokyo

• Arakawa Yasuhiko

  Institute For Nano Quantum Information Electronics And Institute Of Industrial Science The Universit

• Nakayama Hajime

  Institute Of Industrial Science University Of Tokyo

• Arakawa Yasuhiko

  Institute For Nano Quantum Information Electronics (nanoquine) The University Of Tokyo

関連論文

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• Development of Electrically Driven Single-Photon Emitter at Optical Fiber Bands
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• Non-classical Photon Emission from a Single InAs/InP Quantum Dot in the 1.3-μm Optical-Fiber Band
• Differential Absorption in InGaN Multiple Quantum Wells and Epilayers Induced by Blue-Violet Laser Diode
• Temperature-Insensitive Eye-Opening under 10-Gb/s Modulation of 1.3-μm P-Doped Quantum-Dot Lasers without Current Adjustments
• Density Control of GaSb/GaAs Self-assembled Quantum Dots (〜25nm) Grown by Molecular Beam Epitaxy
• Transmission Experiment of Quantum Keys over 50km Using High-Performance Quantum-Dot Single-Photon Source at 1.5μm Wavelength
• Vertical Microcavity Lasers with InGaAs/GaAs Quantum Dots Formed by Spinodal Phase Separation
• Area Density Control of Quantum-Size InGaAs/Ga(Al)As Dots by Metalorganic Chemical Vapor Deposition
• Light Emission from Individual Self-Assembled InAs/GaAs Quantum Dots Excited by Tunneling Current Injection
• Formation of InGaAs Quantum Dots on GaAs Multi-Atomic Steps by Metalorganic Chemical Vapor Deposition Growth
• Defect Modes in Two-Dimensional Triamgular Photonic Crystals
• Lasing Emission from an In_Ga_N Vertical Cavity Surface Emitting Laser
• Phototransistors Using Point Contact Structures
• Phototransistors Using Point Contact Structures
• Direct Observation of Electron Jet from a Point Contact
• Tarahertz Emission from Quantum Beats in Coupled Quantum Wells
• Terahertz Emission from Quantum Beats in Coupled Quantum Wells
• Investigation of the Spectral Triplet in Strongly Coupled Quantum Dot-Nanocavity System
• Below-Gap Spectroscopy of Undoped GaAs/AlGaAs Quantum Wells by Two-Wavelength Excited Photoluminescene
• Spontaneous Emission Characteristics of Quantum Well Lasers in Strong Magnetic Fields : An Approach to Quantum-Well-Box Light Source
• Fabrication of InGaAs Strained Quantum Wire Structures Using Selective-Area Metal-Organic Chemical Vapor Deposition Growth
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• Large Vacuum Rabi Splitting in Single Self-Assembled Quantum Dot-Nanocavity System
• Fabrication of Single-Electron Transistor Composed of a Self-Assembled Quantum Dot and Nanogap Electrode by Atomic Force Microscope Local Oxidation
• Lifetime of Confined LO Phonons in Quantum Dots and Its Impact on Phonon Bottleneck Issue
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• Differential Absorption in InGaN Multiple Quantum Wells and Epilayers Induced by Blue-Violet Laser Diode
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• Cross Sectional Shape Dependence of Quantum Wire Band Structures and Optical Matrix Elements
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• Development of Electrically Driven Single-Quantum-Dot Device at Optical Fiber Bands
• Non-classical Photon Emission from a Single InAs/InP Quantum Dot in the 1.3-μm Optical-Fiber Band
• Direct Observation of Electron Jet from a Point Contact
• Temperature-Insensitive Eye-Opening under 10-Gb/s Modulation of 1.3-μm P-Doped Quantum-Dot Lasers without Current Adjustments
• Internal Strain of Self-Assembled InxGa1-xAs Quantum Dots Calculated to Realize Transverse-Magnetic-Mode-Sensitive Interband Optical Transition at Wavelengths of 1.5 μm bands
• Growth of Columnar Quantum Dots by Metalorganic Vapor-Phase Epitaxy for Semiconductor Optical Amplifiers
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• Design of Silicon Photonic Crystal Waveguides for High Gain Raman Amplification Using Two Symmetric Transvers-Electric-Like Slow-Light Modes
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• Optical Control of Transmittance by Photo-Induced Absorption Effect in InGaN/GaN Structures
• Microphotoluminescence Intensity Images of InGaN Single Quantum Wells
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• Design of Silicon Photonic Crystal Waveguides for High Gain Raman Amplification Using Two Symmetric Transvers-Electric-Like Slow-Light Modes (Special Issue : Solid State Devices and Materials)
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• Temperature Dependent Photoluminescence Excitation Spectroscopy of GaN Quantum Dots in Site Controlled GaN/AlGaN Nanowires
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• Photoluminescence Excitation Spectroscopy on Single GaN Quantum Dots

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