Direct Observation of Electron Jet from a Point Contact
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概要
- 論文の詳細を見る
We report on the photoluminescence image around a point contact fabricated in an InGaAs/GaAs quantum well using a micro-photoluminescence measurement technique. The photoluminescence image was strongly influenced by majority electron flow from the point contact, where the majority electron flow greately reduced radiative recombination of electron-hole pairs generated by the laser illumination. Using this effect we demonstrated visualization of electron flow from the point contact.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 1996-02-28
著者
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Noda Takeshi
Institute Of Industrial Science University Of Tokyo
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Watabe Hiroaki
Institute Of Industrial Science University Of Tokyo
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OHNO Yuzo
Institute of Industrial Science, University of Tokyo
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Nagamune Yasushi
Instilute For Solid State Physics University Of Tokyo
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Sakaki Hiroyuki
Institute Of Industrial Science The University Of Tokyo
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Arakawa Yasuhiko
Institute For Nano Quantum Information Electronics (nanoquine) The University Of Tokyo
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Ohno Yuzo
Institute of Industrial Science, University of Tokyo, 7-22-1 Roppongi, Minato-ku, Tokyo 106, Japan
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Sakaki Hiroyuki
Institute of Industrial Science, University of Tokyo, 7-22-1 Roppongi, Minato-ku, Tokyo 106, Japan
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Arakawa Yasuhiko
Institute of Industrial Science, University of Tokyo, 7-22-1 Roppongi, Minato-ku, Tokyo 106, Japan
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Noda Takeshi
Institute of Industrial Science, University of Tokyo, 7-22-1 Roppongi, Minato-ku, Tokyo 106, Japan
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Watabe Hiroaki
Institute of Industrial Science, University of Tokyo, 7-22-1 Roppongi, Minato-ku, Tokyo 106, Japan
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Nagamune Yasushi
Institute of Industrial Science, University of Tokyo, 7-22-1 Roppongi, Minato-ku, Tokyo 106, Japan
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