Reduced Phonon Scattering in an Asymmetric Triple Barrier Resonant-Tunneling Diode at High Magnetic Fields(Condensed matter: electronic structure and electrical, magnetic, and optical properties)

概要

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The relaxation of hot electrons injected by resonant tunneling into a wide undoped drift region is investigated by measuring the field dependence of the I-V characteristics. In the resonant tunneling region, an increase of the current up to 10% and a decrease in the peak voltage of the resonant tunneling characteristics are observed for a field parallel to the current. It is demonstrated that both phenomena result from a magnetic field induced phonon bottleneck effect in the drift region. In high-field regions, phonon scattering of hot electrons is reduced due to strong confinement into quasi-one-dimension states. However, at magneto-resonance fields, strong current minima are observed.
一般社団法人日本物理学会の論文
2006-11-15