Effects of Dephasing and Dissipation on Nonequilibrium Quantum Noise
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1993-05-31
著者
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SHIMIZU Akira
Institute of physics,University of Tokyo
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Ueda Masahito
NTT Basic Research Laboratories
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Ueda Masahito
Ntt Basic Reserch Laboratories
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Sakaki Hiroyuki
Institute Of Industrial Science University Of Tokyo
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Sakaki Hiroyuki
Institute Of Industrial Science The University Of Tokyo
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Shimizu Akira
Institute Of Physics University Of Tokyo
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Shimizu Akira
Institute Of Physics The University Of Tokyo
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SHIMIZU Akira
Institute of Physics, University of Tokyo
関連論文
- Landauer Conductance and Nonequilibrium Noise of One-Dimensional Interacting Electron Systems
- Nonequilibrium Current Noise Spectrum in a Dissipative Conductor
- Fractional Quantum Hall Effect at ν=1/7
- Effective Hamiltonian for Excitons with Spin Degrees of Freedom
- Reduced Phonon Scattering in an Asymmetric Triple Barrier Resonant-Tunneling Diode at High Magnetic Fields(Condensed matter: electronic structure and electrical, magnetic, and optical properties)
- High-Resolution Transmission Electron Microscopy of AlAs/GaAs Imterfacial Structure in the Projection
- Localization and Quantum Hall Effect in Two-Dimensional Systems Under Strong Magnetic Fields(Transport and Fermiology)
- Single-Electron-Charging Effect Controlled by the Distance between a Substrate and a Liquid-Crystal Molecule
- Phototransistors Using Point Contact Structures
- Phototransistors Using Point Contact Structures
- Magnetophonon Resonance in a Two-Dimensional Electron System in the GaAs-Al_xAs Heterojunction Interface
- Spontaneous Emission Characteristics of Quantum Well Lasers in Strong Magnetic Fields : An Approach to Quantum-Well-Box Light Source
- Control of Current Hysteresis Effects in a GaAs/n-AlGaAs Quantum Trap Field Effect Transistor with Embedded InAs Quantum Dots
- Possible Configurations for All-Optical Ultrafast Photonic Switching
- Kelvin Probe Force Microscopy on InAs Thin Films on (110) GaAs Substrates
- Angular Dependent Magnetoresistance Oscillation in GaAs/Al_xGa_As Superalttice
- Splitting of Photoluminescence Spectra and Negative Differential Resistance Caused by the Electric Field Induced Resonant Coupling of Quantized Levels in GaAs-AlGaAs Multi-Quantum Well Structures
- MBE Growth and Properties of AlGaAs/GaAs/AlGaAs Selectively-Doped Double-Heterojunction Structures with Very High Conductivity
- Anomalous Magnetoresistance in Perpendicular Magnetic Fields Observed in High Mobility GaAs/Al_xGa_As Interfaces
- Activation Energies of the 1/3 and 2/3 Fractional Quantum Hall Effect in GaAs/Al_xGa_As Heterostructures
- Negative Magnetoresistance and Inelastic Scattering Time in Two-Dimensional Electron Systems in GaAs/Al_xGa_As Heterojunction Interfaces
- Atomic-Scale Structures of Top and Bottom Heterointerfaces in GaAs-Al_xGa_As (x=0.2-1) Quantum Wells Prepared by Molecular Beam Epitaxy with Growth Interruption
- One Atomic Layer Heterointerface Fluctuations in GaAs-AlAs Quantum Well Structures and Their Suppression by Insertion of Smoothing Period in Molecular Beam Epitaxy
- 7a-N-13 Oscillatory behavior of a Dicke-superradiating system coupled to electron reservoirs
- Structural Evaluation of GaAs/AlGaAs Heterointerfaces by Atomic-Resolution Electron Micrograph with Clear Contrast
- Carrier Concentration Dependent Absorption Spectra of Modulation Doped n-AlGaAs/GaAs Quantum Wells and Performance Analysis of Optical Modulators and Switches Using Carrier Induced Bleaching (CIB) and Refractive Index Change (CIRIC)
- Formation of Ultra-low Density (${\leq}10^{4}$ cm-2) Self-Organized InAs Quantum Dots on GaAs by a Modified Molecular Beam Epitaxy Method
- Schottky-Barrier Properties of Nearly-Ideal (n≃1) Al Contacts on MBE- and Heat Cleaned-GaAs Surfaces
- Effects of Dephasing and Dissipation on Nonequilibrium Quantum Noise
- Precise Control of Resonant Tunneling Current in AlAs/GaAs/AlAs Double Barrier Diodes with Atomically-Controlled Barrier Widths
- Room Temperature Observation of Differential Negative Resistance in an AlAs/GaAs/AlAs Resonant Tunneling Diode
- A New AlGaAs/GaAs Heterojunction FET with Insulated Gate Structure (MISSFET)
- An Integrated Photodetector Using the Partially Metal-Clad-Dielectric-Slab Waveguide Structure : B-7: SEMICONDUCTOR LASERS (II)
- MBE Growth and Optical Properties of Novel Corrugated-Interface Quantum Wells : Surfaces, Interfaces and Films
- Tunneling Spectroscopy of Resonant Transmission Coefficient in Double Barrier Structure
- Properties of Deep Levels in ZnO Varistors and Their Effect on Current-Response Characteristics
- Velocity-Modulation Transistor (VMT) : A New Field-Effect Transistor Concept
- Scattering Suppression and High-Mobility Effect of Size-Quantized Electrons in Ultrafine Semiconductor Wire Structures
- Second Activation Energy in the Fractional Quantum Hall Effect
- 7a-N-13 Oscillatory behavior of a Dicke-superradiating system coupled to electron reservoirs
- Quantum Noise of Semiconductor Light-Emitting Devices at a Low-Injection Level
- Photon Emission from a False Vacuum of Semiconductors
- Condensation of Interacting Bosons with Reduced Number Fluctuation
- Direct Observation of Electron Jet from a Point Contact
- Self-Assembled Growth of GaSb Type II Quantum Ring Structures
- A New Highly-Conductive (AlGa)As/GaAs/(AlGa)As Selectively-Doped Double-Heterojunction Field-Effect Transistor (SD-DH-FET)
- Reduced Phonon Scattering in an Asymmetric Triple Barrier Resonant-Tunneling Diode at High Magnetic Fields(Condensed matter: electronic structure and electrical, magnetic, and optical properties)