A New Highly-Conductive (AlGa)As/GaAs/(AlGa)As Selectively-Doped Double-Heterojunction Field-Effect Transistor (SD-DH-FET)
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概要
- 論文の詳細を見る
A new type of field-effect transistor (SD-DH-FET) has been successfully fabricated in which very-high-density electrons (〜1.27×10^<12>/cm^2) are supplied from a selectively-doped (AlGa)As/GaAs/(AlGa)As double-heterojunction structure grown by molecular beam epitaxy. The structure showed an extremely high sheet conductivity of 24mS/□ at 77 K with a Hall mobility of 119,000 cm^2/Vs. A depletion-mode FET with this structure showed high channel mobility of more than 35,000 cm^2/Vs at 77 K, suggesting that SD-DH-FETs have potential for applications to extremely high-speed microwave devices and integrated circuits.
- 社団法人応用物理学会の論文
- 1984-02-20
著者
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Sakaki Hiroyuki
Institute Of Industrial Science The University Of Tokyo
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Inoue Kaoru
Institute Of Industrial Science University Of Tokyo:central Research Laboratory Matsushita Electric
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SAKAKI Hiroyuki
Institute of Industrial Science, University of Tokyo
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