Precise Control of Resonant Tunneling Current in AlAs/GaAs/AlAs Double Barrier Diodes with Atomically-Controlled Barrier Widths
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概要
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The resonant tunneling current is studied in AlAs/GaAs/AlAs double barrier heterostructures in which the barrier widths L_B are precisely controlled to be exactly 5, 8 and 11 atomic monolayers. It is demonstrated for the first time that the density of resonant current in these diodes can be controlled from 5×10^2 Acm^<-2> to 1.2×10^4 Acm^<-2> by the choice of L_B, in accordance with the theoretical calculations. Furthermore, I-V characteristics of these devices are shown to be excellent with peak-to-valley ratios of 2.3 at room temperature and 10 at 80 K, the highest values ever reported.
- 社団法人応用物理学会の論文
- 1986-03-20
著者
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Sakaki Hiroyuki
Institute Of Industrial Science University Of Tokyo
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Tsuchiya Masahiro
Institute For Protein Research Osaka University
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Sakaki Hiroyuki
Institute Of Industrial Science The University Of Tokyo
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Tsuchiya Masahiro
Institute For Chemical Reaction Science Tohoku University
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