Carrier Concentration Dependent Absorption Spectra of Modulation Doped n-AlGaAs/GaAs Quantum Wells and Performance Analysis of Optical Modulators and Switches Using Carrier Induced Bleaching (CIB) and Refractive Index Change (CIRIC)
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概要
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Optical absorption spectra of modulation doped quantum wells were studied systematically at 77 K and 300 K as functions of the two dimensional electron concentration N_s. It has been found that the absorption at the wavelength of exciton peak is bleached strongly from 2.1×10^4 cm^<-1> to 800 cm^<-1> at 77 K as N_s is raised from zero to 1×10^<12>/cm^2; this is due to the combined effect of exciton quenching and Burstein Moss shift, which override the band gap reduction caused mainly by the many body effect. Performance analysis of quantum well optical modulators and switches using this carrier induced bleaching (CIB) and refractive index change (CIRIC) is presented to show the picosecond switching capability with low drive voltages.
- 社団法人応用物理学会の論文
- 1987-07-20
著者
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Yoshimura Hisao
Institute Of Industrial Science University Of Tokyo
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Sakaki Hiroyuki
Institute Of Industrial Science University Of Tokyo
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Matsusue Toshio
Institute Of Industrial Science University Of Tokyo
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Sakaki Hiroyuki
Institute Of Industrial Science The University Of Tokyo
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