Room Temperature Observation of Differential Negative Resistance in an AlAs/GaAs/AlAs Resonant Tunneling Diode
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概要
- 論文の詳細を見る
A resonant tunneling diode having AlAs/GaAs/AlAs double barrier structure is designed to enhance the resonant tunneling current component and to suppress the excess current component which is believed to dominate the transport at high temperatures. Based on this design, a diode structure with optimized parameters is prepared by careful molecular beam epitaxial growth, in which the dopant incorporation into the well layer and the interface asperities are minimized. The AlAs/GaAs/AlAs diodes thus fabricated were found to exhibit differential negative resistance at room temperature for the first time.
- 社団法人応用物理学会の論文
- 1985-06-20
著者
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Yoshino Junji
Institute Of Industrial Science University Of Tokyo
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Sakaki Hiroyuki
Institute Of Industrial Science University Of Tokyo
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Tsuchiya Masahiro
Institute For Protein Research Osaka University
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Tsuchiya Masahiro
Institute Of Industrial Science University Of Tokyo
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Sakaki Hiroyuki
Institute Of Industrial Science The University Of Tokyo
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Tsuchiya Masahiro
Institute For Chemical Reaction Science Tohoku University
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