Properties of Deep Levels in ZnO Varistors and Their Effect on Current-Response Characteristics
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概要
- 論文の詳細を見る
Deep level transient spectroscopy is successfully applied to detect and characterize trap centers in ZnO varistors. Three electron traps with activation energies of 0.18, 0.30 and 0.36 eV are detected. The measured time constants of these traps are shown to be correlated with the observed transient current responses, indicating the necessity of removing these slowly responding trap levels to realize very fast ZnO varistors.
- 社団法人応用物理学会の論文
- 1980-12-05
著者
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Ikoma Toshiaki
Institute Of Industrial Science University Of Tokyo
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Sakaki Hiroyuki
Institute Of Industrial Science University Of Tokyo
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Ikoma Toshiaki
Institute Of Industrial Science The University Of Tokyo
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NITAYAMA Akihiro
Institute of Industrial Science, University of Tokyo
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Nitayama Akihiro
Institute Of Industrial Science University Of Tokyo
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Sakaki Hiroyuki
Institute Of Industrial Science The University Of Tokyo
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