Scattering Suppression and High-Mobility Effect of Size-Quantized Electrons in Ultrafine Semiconductor Wire Structures
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概要
- 論文の詳細を見る
Transport properties of electrons confined in ultrafine wire structures are studied theoretically. The scattering probability of such size-quantized electrons is calculated for Coulomb potential and is shown to be suppressed drastically because of the one-dimensional nature of the electronic motion in the wire. Mobilities are estimated to be well beyond 10^6 cm^2/Vs for a properly-designed GaAs wire at low temperatures. The feasibility of preparing such ultrafine structures with and without ultrafine lithography is discussed.
- 社団法人応用物理学会の論文
- 1980-12-05
著者
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Sakaki Hiroyuki
Institute Of Industrial Science University Of Tokyo
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Sakaki Hiroyuki
Institute Of Industrial Science The University Of Tokyo
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