Second Activation Energy in the Fractional Quantum Hall Effect
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概要
- 論文の詳細を見る
The temperature dependence of the resistivity minima of tlte 2/ 3 effect in the frac-tional quantum Hall effect has been measured for a GaAs/AlGaAs heterostructurewith a backside gate. The results at the highest negative gate bias have shown a singleactivated conduction. The systematic change of the temperature dependence con-trolled by the gate bias indicates that this activation energy does not correspond to theexcitation energy of the quasi-particles, that is, there is a second activation process inthe fractional quantum Hall effect.
- 社団法人日本物理学会の論文
- 1987-09-15
著者
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Sakaki H
Univ. Tokyo Tokyo Jpn
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Kawaji Shinji
Department Of Physics And Chemistry Gakushuin University
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Hirakawa Kazuhiko
Institute Of Industrial Science And Institute For Nano Quantum Information Electronics University Of
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Sakaki Hiroyuki
Institute Of Industrial Science University Of Tokyo
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Wakabayashi J
Department Of Physics Chuo University
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Wakabayashi Junichi
Department Of Patholgy Hakodate Goryoukaku Hospital
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SUDOU Satoru
Department of Physics,Gakushuin University
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Sudou Satoru
Department Of Physics Gakushuin University
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Sakaki Hiroyuki
Institute Of Industrial Science The University Of Tokyo
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Hirakawa Kazuhiko
Institute of Industrial Science and INQIE, University of Tokyo, Meguro, Tokyo 153-8505, Japan
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WAKABAYASHI Jun-ichi
Department of Physics, Gakushuin University
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