Sakaki H | Univ. Tokyo Tokyo Jpn
スポンサーリンク
概要
関連著者
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Sakaki H
Univ. Tokyo Tokyo Jpn
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Sakaki Hiroyuki
Institute Of Industrial Science University Of Tokyo
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Sakaki Hiroyuki
Institute Of Industrial Science The University Of Tokyo
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SAKAKI Hiroyuki
Institute of Industrial Science,University of Tokyo
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Kawaji Shinji
Department Of Physics And Chemistry Gakushuin University
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Yoshino Junji
Institute Of Industrial Science University Of Tokyo
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KAWAJI Shinji
Department of Physics,Gakushuin University
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Noge Hiroshi
Rcast University Of Tokyo:quantum Transition Project Jrdc
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Yutaka Kadoya
Department Of Quantum Matter Graduate School Of Advanced Sciences Of Matter Hiroshima University
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Kadoya Yutaka
Department Of Quantum Matter Adsm Hiroshima University
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Wakabayashi J
Department Of Physics Chuo University
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Wakabayashi Junichi
Department Of Patholgy Hakodate Goryoukaku Hospital
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WAKABAYASHI Jun-ichi
Department of Physics, Gakushuin University
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Yoshino J
Tokyo Inst. Technology Tokyo
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WAKABAYASHI Junichi
Department of Physics,Gakushuin University
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NOGE Hiroshi
Quantum Transition Project JRDC
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KADOYA Yutaka
Quantum Transition Project JRDC
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Noda Takeshi
Institute Of Industrial Science University Of Tokyo
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SOMEYA Takao
Research Center for Advanced Science and Technology and Institute of Industrial Science, University
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SAKAKI Hiroyuki
Research Center for Advanced Science and Technology, University of Tokyo
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Akiyama H
Institute For Solid State Physics University Of Tokyo
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SAKAKI Hiroyuki
Quantum Wave Project, JRDC
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Hirakawa Kazuhiko
Institute Of Industrial Science And Institute For Nano Quantum Information Electronics University Of
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Akiyama H
National Inst. Materials And Chemical Res. Ibaraki Jpn
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Sakaki Hiroyuki
Research Center For Advanced Science And Technology (rcast) University Of Tokyo:institute Of Industr
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Sakaki Hiroyuki
Quantum Wave Project Erato Research Development Corporation Of Japan (jrdc)
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Hirakawa Kazuhiko
Institute of Industrial Science and INQIE, University of Tokyo, Meguro, Tokyo 153-8505, Japan
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ARAKAWA Yasuhiko
Institute of Industrial Science, Research Center for Advanced Science and Technology, and Nanoelectr
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Tanaka M
Production Engineering Research Laboratory Hitachi Ltd.
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Koike Yoji
Institute For Materials Research Tohoku Universisty
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Fukase Tetsuro
Institute For Materials Research Tohoku University
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Fukase Tetsuo
Institute For Materials Reserch Tohoku University
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WATANABE Masanobu
Electrotechnical Laboratory, Optical Information Section
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Arakawa Yasuhiko
Institute For Nano Quantum Information Electronics The University Of Tokyo
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Funase Tetsuo
Institute For Material Research Tohoku University
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FUKANO Atsuyuki
Department of Physics,Gakushuin University
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HIRAKAWA Kazuhiko
Institute of Industrial Science,University of Tokyo
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Yoshino J
Department Of Physics Tokyo Institute Of Technology
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Tanaka M
Toshiba Corp. Kawasaki Jpn
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Arakawa Yasuhiko
Research Center For Advanced Science And Technology And Institute Of Industrial Science University O
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Nakamura Y
The Authors Are With Fujitsu Laboratories Limited
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Tanaka M
Institute Of Multidisciplinary Research For Advanced Materials Tohoku University
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Fukase T
Institute For Materials Research Tohoku University
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Noda T
Univ. Tokyo Tokyo Jpn
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NAGAMUNE Yasushi
Electrotechnical Laboratory
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OHNO Yuzo
Institute of Industrial Science, University of Tokyo
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AKIYAMA Hidefumi
Research Center for Advanced Science and Technology, University of Tokyo
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Nakamura Y
Nec Fundamental Research Laboratories
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NAKAMURA Yusui
RCAST, University of Tokyo
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SAKAKI Hiroyuki
RCAST, University of Tokyo
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Koshiba S
Univ. Tokyo Chiba Jpn
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Nakamura Yusui
Rcast University Of Tokyo:quantum Transition Project Jrdc:quantum Wave Project Jrdc
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TANAKA Masaaki
Institute of Industrial Science, University of Tokyo
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Fukano Atsuyuki
Department Of Physics Gakushuin University
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Nagamune Y
Electrotechnical Laboratory:institute Of Industrial Science University Of Tokyo
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Akiyama Hidefumi
Research Center For Advanced Science And Technology (rcast) The University Of Tokyo
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Arakawa Yasuhiko
Institute For Nano Quantum Information Electronics And Institute Of Industrial Science The Universit
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Tanaka Masaaki
Institute Of Industrial Science University Of Tokyo
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Arakawa Yasuhiko
Institute For Nano Quantum Information Electronics (nanoquine) The University Of Tokyo
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Fukase Tetsuo
Institute for Materials Research, Tohoku University
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WATANABE Masanobu
Electrotechnical Laboratory
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平川 一彦
Jst-crest:東大生研:東大ナノ量子機構
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NAGATA Makoto
Department of Computer and Systems Engineering, Kobe University
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PETROFF Pierre
Materials Department, University of California
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Petroff Pierre
Materiais And Electrical And Computer Engineering University Of Callfornia
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Petroff Pierre
Materials Department And Quest University Of California
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Watanabe M
Hiroshima Univ. Higashi‐hiroshima Jpn
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Suga Tadatomo
Research Center For Advanced Science And Technology University Of Tokyo
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Rufenacht Mathilde
Research Center For Advanced Science And Technology (rcast) University Of Tokyo
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Goto Takayuki
Institute For Materials Research Tohoku University
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Watanabe Mahiko
Department Of Applied Physics And Chemistry Faculty Of Engineering Hiroshima University
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Kano H
Quantum Wave Project Jrdc
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OKAMOTO Toru
Department of Physics, University of Tokyo
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Kano Hiroyuki
Quantum Wave Project Jrdc
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YUSA Go
Research Center for Advanced Science and Technology, University of Tokyo
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Goto Tsuneaki
The Institute Of Solid State Physics Tokyo University
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Yusa Go
Research Center For Advanced Science And Technology University Of Tokyo
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TSUJINO Soichiro
Research Center for Advanced Science and Technology (RCAST), University of Tokyo
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SUGAWARA Hiroharu
Quantum Transition Project, JRDC
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YOSHIDA Takashi
Quantum Wave Project, JRDC
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AKIYAMA Hidefumi
Quantum Wave Project, JRDC
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Okamoto Toru
Department Of Molecular Virology Research Institute For Microbial Diseases Osaka University
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Nagata M
Nippon Electronic Engineering College
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TANAKA Ichiro
RCAST, University of Tokyo
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TAKEUCHI Norishige
Nikon Corporation
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KOSHIBA Shyun
RCAST, University of Tokyo
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NAKAMURA Yusui
Quantum Wave Project, JRDC
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TSUCHIYA Masahiro
Quantum Wave Project, JRDC
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KOSHIBA Shyun
Quantum Wave Project, JRDC
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Hirakawa Katsunobu
Department of Physics, Gakushuin University
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YAMAUCHI Miyuki
RCAST, University of Tokyo
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KADOYA Yutaka
RCAST, University of Tokyo
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SUGAWARA Hiroharu
RCAST, University of Tokyo
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SAKAI Hiroyuki
Institute of Industrial Science,University of Tokyo
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SHIGENO Hiroyuki
Department of Physics,Gakushuin University
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NAMBU Toshiaki
Department of Physics,Gakushuin University
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KUBOKI Keiju
Department of Physics,Gakushuin University
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KAWAGUCHI Yoichi
Gakushuin Women's Junior College
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Suga Tadatomo
Research Center For Advanced Science And Technology (rcast) The University Of Tokyo
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Yamauchi Miyuki
Rcast University Of Tokyo:mathematical Systems Institute Inc.
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Tsujino Soichiro
Research Center For Advanced Science And Technology (rcast) University Of Tokyo
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Tsuchiya Masahiro
Quantum Wave Project Jrdc
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Kuboki Keiju
Department Of Physics Gakushuin University
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Nambu Toshiaki
Department Of Physics Gakushuin University:sony Corporation.
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SUDOU Satoru
Department of Physics,Gakushuin University
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Kawaguchi Yoichi
Gakushuin Women's Junior College
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Sudou Satoru
Department Of Physics Gakushuin University
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Nagata Makoto
Department Of Computer And Systems Engineering Kobe University
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Yoshida Takashi
Quantum Wave Project Jrdc
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Tanaka Ichiro
Rcast University Of Tokyo:quantum Transition Project Jrdc
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Goto Takayuki
Institute for Material Research,Tohoku University
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Okamoto Toru
Department of Chemistry, Faculty of Science, Kyushu University 33
著作論文
- Fractional Quantum Hall Effect at ν=1/7
- Fabrication of 10-Nanometer-scale GaAs Dot Structures by In Situ Selective Gas Etching with Self-Assembled InAs Dots as a Mask
- Localization and Quantum Hall Effect in Two-Dimensional Systems Under Strong Magnetic Fields(Transport and Fermiology)
- Phototransistors Using Point Contact Structures
- Phototransistors Using Point Contact Structures
- Molecular Beam Epitaxial Growth of InGaAs Quantum Welts on (110) GaAs Surfaces
- Effect of Intense Intersubband Optical Excitation on the Electron Distribution in GaAs/AlAs Quantum Wells
- Etching of InAs in HCl Gas and Selective Removal of InAs Layer on GaAs in Ultrahigh-Vacuum Processing System
- Surface Smoothness and Step Bunching on GaAs (111)B Facets Formed by Molecular Beam Epitaxy
- Formation of Two-Dimensional Electron Gas in N-AlGaAs/GaAs Heterojunctions on (111)B Microfacets Grown by Molecular Beam Epitaxy on a Patterned (001) Substrate
- Electronic States in Edge Quantum Wires on GaAs/AlGaAs Facet Structures
- Activation Energies of the Fractional Quantum Hall Effect in GaAs/AlGaAs Heterostructures
- Anomalous Magnetoresistance in Perpendicular Magnetic Fields Observed in High Mobility GaAs/Al_xGa_As Interfaces
- Activation Energies of the 1/3 and 2/3 Fractional Quantum Hall Effect in GaAs/Al_xGa_As Heterostructures
- Negative Magnetoresistance and Inelastic Scattering Time in Two-Dimensional Electron Systems in GaAs/Al_xGa_As Heterojunction Interfaces
- Atomic-Scale Structures of Top and Bottom Heterointerfaces in GaAs-Al_xGa_As (x=0.2-1) Quantum Wells Prepared by Molecular Beam Epitaxy with Growth Interruption
- One Atomic Layer Heterointerface Fluctuations in GaAs-AlAs Quantum Well Structures and Their Suppression by Insertion of Smoothing Period in Molecular Beam Epitaxy
- Effect of Ionized Impurities at Heterointerface on Concentration and Mobility of Two-Dimensional Electrons in Selectively Doped Heterojunction Structures
- Second Activation Energy in the Fractional Quantum Hall Effect