Molecular Beam Epitaxial Growth of In<0.15>Ga<0.85>As Quantum Welts on (110) GaAs Surfaces
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1996-05-15
著者
-
SOMEYA Takao
Research Center for Advanced Science and Technology and Institute of Industrial Science, University
-
SAKAKI Hiroyuki
Research Center for Advanced Science and Technology, University of Tokyo
-
Sakaki H
Univ. Tokyo Tokyo Jpn
-
Akiyama H
Institute For Solid State Physics University Of Tokyo
-
AKIYAMA Hidefumi
Research Center for Advanced Science and Technology, University of Tokyo
-
Akiyama H
National Inst. Materials And Chemical Res. Ibaraki Jpn
-
Akiyama Hidefumi
Research Center For Advanced Science And Technology (rcast) The University Of Tokyo
-
Sakaki Hiroyuki
Research Center For Advanced Science And Technology (rcast) University Of Tokyo:institute Of Industr
関連論文
- High-Current Pulsed Power Generator ASO-X Using Inductive Voltage Adder and Inductive Energy Storage System
- Two-color Laser Interferometer for Pulsed Plasma Measurements
- Characterization of Separation-by-Implanted-Oxygen Wafers with Monoenergetic Positron Beams
- Investigation of the Polarization-Induced Charges in Modulatlon Doped Al_xGa_N/GaN Heterostructures through Capacitance-Voltage Profiling and Simulation
- Influence of Ferroelectric Polarization on the Properties of Two-Dimensional Electron Gas in Pb(Zr_Ti_)O_3/Al_xGa_N/GaN Structures
- Interferometer Measurements in Pulsed Plasma Experiments
- Behavior of Capillary Plasmas with Different Diameters
- Area-Controlled Growth of InAs Quantum Dots by Selective MOCVD
- Fractional Quantum Hall Effect at ν=1/7
- Fabrication of 10-Nanometer-scale GaAs Dot Structures by In Situ Selective Gas Etching with Self-Assembled InAs Dots as a Mask
- Role of E/Z Photoisomerization of Cinnamate Side Chains Attached to Polymer Backbones in the Alignment Photoregulation of Nematic Liquid Crystals
- Liquid Crystal Alignment Regulation Using Photocrosslinkable Polymers with Azide Residues
- Localization and Quantum Hall Effect in Two-Dimensional Systems Under Strong Magnetic Fields(Transport and Fermiology)
- Phototransistors Using Point Contact Structures
- Phototransistors Using Point Contact Structures
- Improved High Collection Efficiency in Fluorescence Microscopy With a Weierstrass-Sphere Solid Immersion Lens : Instrumantation, Measurement, and Fabrication,Technology
- Application of Solid Immersion Lens to Submicron Resolution Imaging of Nano-Scale Quantum Wells
- Reduction in Driving Voltage of In-Plane Switching Liquid Crystal Displays Using Photo-Alignment Method
- Thermal Stability of Magnetically-Aligned Nematic Liquid Crystal Layer on Nonrubbed Polyimide Surface
- Application of Solid Immersion Lens to High-Resolution Photoluminescenee Imaging of Patterned GaAs Quantum Wells
- Molecular Beam Epitaxial Growth of InGaAs Quantum Welts on (110) GaAs Surfaces
- Relationship between Photoreactivity and Ability to Regulate Liquid Crystal Alignment of Polymers with Cinnamate Side Chains
- Effect of Intense Intersubband Optical Excitation on the Electron Distribution in GaAs/AlAs Quantum Wells
- Etching of InAs in HCl Gas and Selective Removal of InAs Layer on GaAs in Ultrahigh-Vacuum Processing System
- Surface Smoothness and Step Bunching on GaAs (111)B Facets Formed by Molecular Beam Epitaxy
- Formation of Two-Dimensional Electron Gas in N-AlGaAs/GaAs Heterojunctions on (111)B Microfacets Grown by Molecular Beam Epitaxy on a Patterned (001) Substrate
- Fabrication of InGaAs Vertical-Cavity Surface-Emitting Laser by Molecular Beam Epitaxy and Its Room-Temperature Operation on (411)A GaAs Substrates
- Electronic States in Edge Quantum Wires on GaAs/AlGaAs Facet Structures
- Activation Energies of the Fractional Quantum Hall Effect in GaAs/AlGaAs Heterostructures
- Anomalous Magnetoresistance in Perpendicular Magnetic Fields Observed in High Mobility GaAs/Al_xGa_As Interfaces
- Activation Energies of the 1/3 and 2/3 Fractional Quantum Hall Effect in GaAs/Al_xGa_As Heterostructures
- Negative Magnetoresistance and Inelastic Scattering Time in Two-Dimensional Electron Systems in GaAs/Al_xGa_As Heterojunction Interfaces
- Atomic-Scale Structures of Top and Bottom Heterointerfaces in GaAs-Al_xGa_As (x=0.2-1) Quantum Wells Prepared by Molecular Beam Epitaxy with Growth Interruption
- One Atomic Layer Heterointerface Fluctuations in GaAs-AlAs Quantum Well Structures and Their Suppression by Insertion of Smoothing Period in Molecular Beam Epitaxy
- Coherent Dynamics of Excitons in an Island-Inserted GaAs/AlAs Quantum Well Structure : Suppression of Phase Relaxation and a Deep Quantum Beat
- Effect of Ionized Impurities at Heterointerface on Concentration and Mobility of Two-Dimensional Electrons in Selectively Doped Heterojunction Structures
- Quantum Wire Superlattices and Coupled Quantum Box Arrays: A Novel Method to Suppress Optical Phonon Scattering in Semiconductors
- Second Activation Energy in the Fractional Quantum Hall Effect