Activation Energies of the Fractional Quantum Hall Effect in GaAs/AlGaAs Heterostructures
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概要
- 論文の詳細を見る
Temperature dependence of the diagonal resistivity p.. at the minimum of the 1 /3and 273 fractional quantum Hall effect has been measu?'ed for GaAs/A1GaAsheterostructures having wide variety of mobility. The results are well expressed byassuming two activated corxduction processes. The activation energies in hightemperature region do not show a systematic dependence on 1.he magnetic field B buton the pH, where p is the electron mobility at zero field. The activation energy for the2/3 effect is about one third of that for the 1/3 effect when sealed by pH. This resultshows that there is no electron-hole symmetry in the experimental activation energy.
- 社団法人日本物理学会の論文
- 1986-04-15
著者
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Yoshino J
Tokyo Inst. Technology Tokyo
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Yoshino Junji
Institute Of Industrial Science University Of Tokyo
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WAKABAYASHI Junichi
Department of Physics,Gakushuin University
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KAWAJI Shinji
Department of Physics,Gakushuin University
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Sakaki H
Univ. Tokyo Tokyo Jpn
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Kawaji Shinji
Department Of Physics And Chemistry Gakushuin University
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Wakabayashi J
Department Of Physics Chuo University
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Wakabayashi Junichi
Department Of Patholgy Hakodate Goryoukaku Hospital
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SAKAI Hiroyuki
Institute of Industrial Science,University of Tokyo
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WAKABAYASHI Jun-ichi
Department of Physics, Gakushuin University
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