Surface Smoothness and Step Bunching on GaAs (111)B Facets Formed by Molecular Beam Epitaxy
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1996-07-15
著者
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Nakamura Y
The Authors Are With Fujitsu Laboratories Limited
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Sakaki H
Univ. Tokyo Tokyo Jpn
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Noge Hiroshi
Rcast University Of Tokyo:quantum Transition Project Jrdc
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Nakamura Y
Nec Fundamental Research Laboratories
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NAKAMURA Yusui
RCAST, University of Tokyo
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TANAKA Ichiro
RCAST, University of Tokyo
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TAKEUCHI Norishige
Nikon Corporation
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KOSHIBA Shyun
RCAST, University of Tokyo
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SAKAKI Hiroyuki
RCAST, University of Tokyo
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Koshiba S
Univ. Tokyo Chiba Jpn
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Nakamura Yusui
Rcast University Of Tokyo:quantum Transition Project Jrdc:quantum Wave Project Jrdc
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Tanaka Ichiro
Rcast University Of Tokyo:quantum Transition Project Jrdc
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- Surface Smoothness and Step Bunching on GaAs (111)B Facets Formed by Molecular Beam Epitaxy