Activation Energies of the 1/3 and 2/3 Fractional Quantum Hall Effect in GaAs/Al_xGa_<1-x>As Heterostructures
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概要
- 論文の詳細を見る
Activation energies of the diagonal resistivity p.. near the minima in the 1 /3and 2/3 fractional quantum Hall effect are determined in very high mobilityGaAs/Al.Ga.-.As (,v:0.3) heterostructures. Measurements of p.. and p., aremade at temperatures ranging from 1 K to 0.1 K in magnetic fields up to 15.5 T.The activation energies are 2.7 K and 0.89 K at the filling factor of a Landaulevel of l /3 and 2/3, respectively. The former is in good agreement with theoreti-cat predictions.
- 社団法人日本物理学会の論文
- 1984-06-15
著者
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Yoshino J
Tokyo Inst. Technology Tokyo
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Yoshino Junji
Institute Of Industrial Science University Of Tokyo
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WAKABAYASHI Junichi
Department of Physics,Gakushuin University
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KAWAJI Shinji
Department of Physics,Gakushuin University
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SAKAKI Hiroyuki
Institute of Industrial Science,University of Tokyo
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Sakaki H
Univ. Tokyo Tokyo Jpn
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Kawaji Shinji
Department Of Physics And Chemistry Gakushuin University
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Sakaki Hiroyuki
Institute Of Industrial Science University Of Tokyo
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Wakabayashi J
Department Of Physics Chuo University
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Wakabayashi Junichi
Department Of Patholgy Hakodate Goryoukaku Hospital
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Sakaki Hiroyuki
Institute Of Industrial Science The University Of Tokyo
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WAKABAYASHI Jun-ichi
Department of Physics, Gakushuin University
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