Kawaji Shinji | Department Of Physics And Chemistry Gakushuin University

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著作論文

Localization in Landau Subbands with the Landau Quantum Number 0 and 1 of Si-MOS Inversion Layers
Fractional Quantum Hall Effect at ν=1/7
Localization and Quantum Hall Effect in Two-Dimensional Systems Under Strong Magnetic Fields(Transport and Fermiology)
Phase Boundaries between Quantum Hall Metal and Hall Insulator in Si-MOSFET's and Many-Body Enhancement of Valley- and Zeeman-Splitting
Effects of Tailing of Density of State on the Mobility of Si-MOSFETs at Low Temperatures : A Proposal for the Method of Characterization of Si-SiO_2 Interfaces
Breakdown of the Quantum Hall Effect in GaAs/AlGaAs Heterostructures Due to Current
Collapse of Quantized Hall Resistance and Breakdown of IQHE in GaAs/AlGaAs Heterostructures
Temperature Dependence of Collapse of Quantized Hall Resistance(Condensed Matter : Electronic Structure, Electrical, Magnetic and Optical Properties)
Effects of Light and Temperature on the Growth of Silicon Stain Films
Deep Trap Levels in Silicon P-N Junctions
Activation Energies of the Fractional Quantum Hall Effect in GaAs/AlGaAs Heterostructures
Anomalous Magnetoresistance in Perpendicular Magnetic Fields Observed in High Mobility GaAs/Al_xGa_As Interfaces
Activation Energies of the 1/3 and 2/3 Fractional Quantum Hall Effect in GaAs/Al_xGa_As Heterostructures
Negative Magnetoresistance and Inelastic Scattering Time in Two-Dimensional Electron Systems in GaAs/Al_xGa_As Heterojunction Interfaces
Electron Concentration and Mobility Dependence of Breakdown of the Quantum Hall Effect
Determination of the Fine Structure Constant Based on the Quantum Hall Effect
Quantized Hall Resistivity in Si-MOSFETs Measured at Liq.^3He Temperatures
Superconductivity in InAs Surfaces
Effect of Residual Stress on Hole Mobility of SOS MOS Devices
Influence of Crystalline Defects and Residual Stress on the Electrical Characteristics of SOS MOS Devices
Mobility Hump and Inversion Layer Subbands in Si on Sapphire
A.C. and D.C. Field Effects on Cleaned Germanium Surfaces
Analysis of Telnperature Dependent Hall Conductivity in Silicon Inversion Layers in Strong Magnetic Fields by a Mobility Edge Model
Quantum Galvanomagnetic Effect in n-Channel Silicon Inversion Layers under Strong Magnetic Fields (Selected Topics in Semiconductor Physics) -- (Surface)
Hall Effect in Sillicon Inversion Layers under Strong Magnetic Fields
Hall Current Measurement under Strong Magnetic Fields for Silicon MOS Inversion Layers
Hall Effect in Silicon MOS Inversion Layers under Strong Magnetic Fields
Experiments on the Critical Exponent of Localization in Landau Subbands with the Landau Quantum Numbers 0 and 1 in Si-MOS Inversion Layers
Experimental Correlation between Diagonal and Hall Conductivities of Silicon MOS inversion Layers in Strong Magnetic Fields
Second Activation Energy in the Fractional Quantum Hall Effect
Valley Splitting in Si(100)n-Channel Inversion Layers Determined by a Tilted Field Method
Collapse of the Quantised Hall Resistance and Role of the Diagonal Resistivity in the Quantum Hall Effect(Condensed Matter : Electronic Structure, Electrical, Magnetic and Optical Properties)
Experiments on Scaling Relation of Conductivities in Silicon MOS Inversion Layers in Strong Magnetic Fields
Anderson Localization in Silicon MOS Inversion Layers at Low Densities
Negative Magnetoresistance and Inelastic Scattering Time in Si-MOS Inversion Layers
Anomalous Magnetoresistance of Clean Cleaved Surfaces in InAs
Spin-Orbit Interaction in Two Dimensiomal Systems in InAs n-Inversion Layers
Experimental researches on quantum transport in semiconductor two-dimensional electron systems
Surfons and the Electron Mobility in Silicon Inversion Layers
Anomalous Magnetoresistance in the Field Parallel to the Interface in Si-MOS Inversion Layers
Angular Distribution Measurements of Photoemitted Electrons for InAs by Means of Magnetic Field
Experiments on Localization in Semiconductor Two-Dimensional Systems
Negative Magnetoresistance in Silicon (100) MOS Inversion Layers
A Study of Electron Mobility and Electron-Phonon Interaction in Si MOSFETs by Negative Magnetoresistance Experiments
The Two-Dimensional Lattice Scattering Mobility in a Semiconductor Inversion Layer
Possible Ring-Exchange Interaction and Aharonov-Bohm Effect in Two-Dimensional Electron Solids

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