Breakdown of the Quantum Hall Effect in GaAs/AlGaAs Heterostructures Due to Current

元データ 1994-06-15 社団法人日本物理学会

概要

Properties of the breakdown of the quantum Hall effect due to current have been measured in specially designed samples with the width ranging from 10 to 120 μ m made from a GaAs/AlGaAs heterostructure wafer at temperatures between 0.5 and 1.2 K in magnetic fields up to 23 T. Critical current in the onset of the breakdown is proportional to the sample width. The critical current density does not depend on temperature but depends on the Hall-plateau quantum number i for i=1, 2 and 4 where R_H(i)=h/ie^2. Experimental results can be explained by production of dissipative carriers by inter-Landau-level transitions from the filled Landau level to the empty Landau level cuased by strong local electric fields in the extended states enhanced due to the localization.

著者

平川 一彦 Jst-crest:東大生研:東大ナノ量子機構
NAGATA Makoto Department of Computer and Systems Engineering, Kobe University
Gotoh T Nagoya Inst. Technol. Nagoya
Fukase Tetsuro Institute For Materials Research Tohoku University
Fukase Tetsuo Institute For Materials Reserch Tohoku University
Gotoh Takayuki Institute For Materials Research Tohoku University
Funase Tetsuo Institute For Material Research Tohoku University
KAWAJI Shinji Department of Physics,Gakushuin University
Goto Tsuneaki The Institute Of Solid State Physics Tokyo University
Fukase T Institute For Materials Research Tohoku University
Kawaji Shinji Department Of Physics And Chemistry Gakushuin University
Nagata M Nippon Electronic Engineering College
Okamoto Tohru Department of Physics, Gakushuin University
Okamoto Tohru Department Of Physics Gakushuin University
Hirakawa Katsunobu Department of Physics, Gakushuin University
Nagata Makoto Department Of Computer And Systems Engineering Kobe University
Fukase Tetsuo Institute for Materials Research, Tohoku University

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