Localization and Quantum Hall Effect in Two-Dimensional Systems Under Strong Magnetic Fields(Transport and Fermiology)

元データ 1993-06-30

概要

Experimental researches of quantum transport properties of semiconductor two-dimensional electron systems in Si-MOSFETs and GaAs/AlGaAs heterostructures in high magnetic fields up to 27 T and at low temperatures down to 20 mK are performed. Analysis of the Hall conductivity of Si-MOSFETs based on a mobility edge model shows that the temperature dependence of the mobility edge can not be explained by existing theory of localization. The fractional quantum Hall effect is observed at the filling factor of 1/7 in heterostructures. Sample size dependence and magnetic field dependence of the breakdown of the integral quantum Hall effect in heterostructures reveal that the Hall current is carried not by the edge states but by the extended states in the localization in the bulk of the two-dimensional systems.

著者

平川 一彦 Jst-crest:東大生研:東大ナノ量子機構
NAGATA Makoto Department of Computer and Systems Engineering, Kobe University
Koike Yoji Institute For Materials Research Tohoku Universisty
Fukase Tetsuro Institute For Materials Research Tohoku University
Fukase Tetsuo Institute For Materials Reserch Tohoku University
Goto Takayuki Institute For Materials Research Tohoku University
Funase Tetsuo Institute For Material Research Tohoku University
WAKABAYASHI Junichi Department of Physics,Gakushuin University
KAWAJI Shinji Department of Physics,Gakushuin University
FUKANO Atsuyuki Department of Physics,Gakushuin University
HIRAKAWA Kazuhiko Institute of Industrial Science,University of Tokyo
SAKAKI Hiroyuki Institute of Industrial Science,University of Tokyo
OKAMOTO Toru Department of Physics, University of Tokyo
Goto Tsuneaki The Institute Of Solid State Physics Tokyo University
Sakaki H Univ. Tokyo Tokyo Jpn
Fukase T Institute For Materials Research Tohoku University
Okamoto Toru Department Of Molecular Virology Research Institute For Microbial Diseases Osaka University
Kawaji Shinji Department Of Physics And Chemistry Gakushuin University
Nagata M Nippon Electronic Engineering College
Hirakawa Katsunobu Department of Physics, Gakushuin University
Hirakawa Kazuhiko Institute Of Industrial Science And Institute For Nano Quantum Information Electronics University Of
Sakaki Hiroyuki Institute Of Industrial Science University Of Tokyo
Wakabayashi J Department Of Physics Chuo University
Wakabayashi Junichi Department Of Patholgy Hakodate Goryoukaku Hospital
Fukano Atsuyuki Department Of Physics Gakushuin University
Sakaki Hiroyuki Institute Of Industrial Science The University Of Tokyo
Nagata Makoto Department Of Computer And Systems Engineering Kobe University
Hirakawa Kazuhiko Institute of Industrial Science and INQIE, University of Tokyo, Meguro, Tokyo 153-8505, Japan
Fukase Tetsuo Institute for Materials Research, Tohoku University
Goto Takayuki Institute for Material Research,Tohoku University
WAKABAYASHI Jun-ichi Department of Physics, Gakushuin University
Okamoto Toru Department of Chemistry, Faculty of Science, Kyushu University 33

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