Collapse of Quantized Hall Resistance and Breakdown of IQHE in GaAs/AlGaAs Heterostructures

概要

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Collapse of qtrantized H2111 resistance (QHR), not restrlting frorn loreakdown of the dissipationless ctrrrent floxv, is reported in the integer qtranttrzta Hall effect (IQHB) state with i : 4 ofGaAs/Al0.3Gag.7As btmtterfly-type Hall bars at laigh Hall electric fields. The Hall electric field Fj)at the collapse of' QHR is abotrt 2O'7o lower than the Fjj for the brearkdown of the dissip?ttionlessctrrrent flow. The nature of difference betxveen the efl'ect of' the Fjj on the collapse of QHl3, andthe effect of the ,l'l-I on the breakdown is disctrssed.
社団法人日本物理学会の論文
1998-04-15