Hall Effect in Silicon MOS Inversion Layers under Strong Magnetic Fields
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概要
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The channel conductance and the Hall voltage in a wide and a long rectangularsamples of n-type MOS inversion layers on Si(100) stu'faces are measured in astrons masnetic field of 100 k0e at 1.6 K. A method of transf'ormation from theconductance and the Hall voltage data to the transverse conductivity o.. andthe Hall conductivity o., in arbitrary magnetic field strength based on the Hall-effect field correction are described. The conductivity o.. and o., are comparedwith o.. measured directly in a Corbino disk sample and o., predicted by thequantum transport theory and the electron mobility data. (}ood agreement isobtained only in the wide sample by the use of a modified Hall-effect field correc-lion. Effects of the electrode resistance, the side edges and thc sample geometryare discussed in connection to the modification of the Hall-effect field correction.
- 社団法人日本物理学会の論文
- 1978-06-15
著者
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KAWAJI Shinji
Department of Physics,Gakushuin University
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Kawaji Shinji
Department Of Physics And Chemistry Gakushuin University
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Wakabayashi Jun-ichi
Department Of Physics Gakushuin University
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