Experiments on the Critical Exponent of Localization in Landau Subbands with the Landau Quantum Numbers 0 and 1 in Si-MOS Inversion Layers
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概要
- 論文の詳細を見る
Temperature (T ) dependence of the mobility edge is examirxed by a model calcula-lion which reproduces the experimental line shape of do.,/ ctv. (a,: Hall conductivi-ty, ./V.,: electron concentration) for (OL - ) and (IT - ) Landau subbands in Si-MOS in-version layers in the range of 0.35 K 3 T 3 1.5 K and in a magrnetic field of 15 T. Theresult show that the critical behaviour of localization depends on the Landau quan-turn number.
- 社団法人日本物理学会の論文
- 1989-06-15
著者
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Kawaji Shinji
Department Of Physics And Chemistry Gakushuin University
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Wakabayashi J
Department Of Physics Chuo University
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Wakabayashi Junichi
Department Of Patholgy Hakodate Goryoukaku Hospital
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YAMANE Mika
Department of Physics,Gakushuin University
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Yamane Mika
Department Of Physics Gakushuin University
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WAKABAYASHI Jun-ichi
Department of Physics, Gakushuin University
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