Experiments on Scaling Relation of Conductivities in Silicon MOS Inversion Layers in Strong Magnetic Fields
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概要
- 論文の詳細を見る
Scaling relation of the diagonal and the Hall conductivities is experimentallystudied in the (OL -F- ) Landau level (0 refers to Landau quantum number, L to an-tiparallel spin to the magnetic field, l- to lower valley) of an rz-channel inversion layeron a silicon (001) surface in magnetic fields of 13 T and 15 T at temperatures between1.5 K and 4.2 K.
- 社団法人日本物理学会の論文
- 1987-01-15
著者
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WAKABAYASHI Junichi
Department of Physics,Gakushuin University
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KAWAJI Shinji
Department of Physics,Gakushuin University
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Kawaji Shinji
Department Of Physics And Chemistry Gakushuin University
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Wakabayashi Junichi
Department Of Patholgy Hakodate Goryoukaku Hospital
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