Valley Splitting in Si(100)n-Channel Inversion Layers Determined by a Tilted Field Method
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概要
- 論文の詳細を見る
Surface electron density dependence of the valley splitting energy AE. in ann-channel (100) silicon MOSFET has been obtained by finding the electrondensity region in which the relation AE.=AE./2 and AE.=3AE./2 occurs, whereAE. is the spin splitting energy. The lower bound and the upper bound for thiselectron density region have been determined by the observation of a spin splitminimum and a spin split maximum, respectively. The results are compared withthe existing theories.
- 社団法人日本物理学会の論文
- 1985-10-15
著者
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KIMURA Shoichi
Department of Orthopaedic Surgery, Hokkaido University School of Medicine
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Kawaji Shinji
Department Of Physics Gakushuin University
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Kawaji Shinji
Department Of Physics And Chemistry Gakushuin University
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Wakabayashi Junichi
Department Of Patholgy Hakodate Goryoukaku Hospital
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Kimura Shoichi
Department Of Physics Gakushuin University
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Kimura Shoichi
Department Of Orthopaedic Surgery Hokkaido University School Of Medicine
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