Temperature Dependence of Collapse of Quantized Hall Resistance(Condensed Matter : Electronic Structure, Electrical, Magnetic and Optical Properties)

概要

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Similarity is observed in the deviation of Hall resistance from the quantized value with the increase in the source-drain current I_<SD> in our butterfly-type Hall bars and in the Hall bars used by Jeanneret et al. [IEEE Trans. Instrum. Meas. 44 (1995) 254], while changes in the diagonal resistivity ρ_<xx> with I_<SD> are significantly different between these Hall bars. The temperature dependence of the critical Hall electric field F_<cr>(T) for the collapse of R_H(4) measured in these Hall bars is approximated using F_<cr>(T)=F_<cr>(0)(1-(T/T_<cr>)^2). Here, the critical Hall electric field at zero temperature depends on the magnetic field B as F_<cr>(0)αB^<3/2>. Theoretical considerations are given on F_<cr>(T) on the basis of a temperature-dependent mobility edge model and a schema of temperature-dependent inter-Landau level tunneling probability arising from the Fermi distribution function. The former does not fit in with the I_<SD> dependence of activation energy in ρ_<xx>.
社団法人日本物理学会の論文
2006-01-15