Experimental Correlation between Diagonal and Hall Conductivities of Silicon MOS inversion Layers in Strong Magnetic Fields
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概要
- 論文の詳細を見る
Correlations between the diagonal and Hall conductivities are experimentallystudied in the (0Jf), (OL -), (IT-F-), (IT -), (IJ-l-) and (IL -) Landau subbands (0and l refer to Landau quantum numbers, T and J to parallel and antiparallel spindirection to the magnetic field, respectively, -F- and - to the lower and higher valley,respectively) of an n-channel inversion layer on a silicon (001) surface in magneticfields of 15 T and 14 T at temperatures between 1.5 K and 0.35 K. Results are consis-tent with numerical studies.
- 社団法人日本物理学会の論文
- 1989-06-15
著者
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Kawaji Shinji
Department Of Physics And Chemistry Gakushuin University
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Wakabayashi J
Department Of Physics Chuo University
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Wakabayashi Junichi
Department Of Patholgy Hakodate Goryoukaku Hospital
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YAMANE Mika
Department of Physics,Gakushuin University
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Yamane Mika
Department Of Physics Gakushuin University
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WAKABAYASHI Jun-ichi
Department of Physics, Gakushuin University
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