The Two-Dimensional Lattice Scattering Mobility in a Semiconductor Inversion Layer
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概要
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A theory of two-dimensional lattice scattering for electrons or holes in a semiconductor inversion layer is described. The theory can explain the electron mobility in Si inversion layers at room temperature taking the two-dimensional deformation potential constant as 23±1 eV.
- 社団法人日本物理学会の論文
- 1969-10-05
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関連論文
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