• Effects of Tailing of Density of State on the Mobility of Si-MOSFETs at Low Temperatures : A Proposal for the Method of Characterization of Si-SiO_2 Interfaces
  • Breakdown of the Quantum Hall Effect in GaAs/AlGaAs Heterostructures Due to Current
  • Improved Quantum Hall Standard of Resistance at Electrotechnical Laboratory(General Physics)
  • Resistance Ratio Bridge Using Cryogenic Current Comparator with DC-Superconducting Quantum Interference Device Magnetometer
  • Collapse of Quantized Hall Resistance and Breakdown of IQHE in GaAs/AlGaAs Heterostructures
  • Temperature Dependence of Collapse of Quantized Hall Resistance(Condensed Matter : Electronic Structure, Electrical, Magnetic and Optical Properties)
  • Effects of Light and Temperature on the Growth of Silicon Stain Films
  • Deep Trap Levels in Silicon P-N Junctions
  • Activation Energies of the Fractional Quantum Hall Effect in GaAs/AlGaAs Heterostructures
  • Anomalous Magnetoresistance in Perpendicular Magnetic Fields Observed in High Mobility GaAs/Al_xGa_As Interfaces
  • Activation Energies of the 1/3 and 2/3 Fractional Quantum Hall Effect in GaAs/Al_xGa_As Heterostructures
  • Negative Magnetoresistance and Inelastic Scattering Time in Two-Dimensional Electron Systems in GaAs/Al_xGa_As Heterojunction Interfaces
  • Electron Concentration and Mobility Dependence of Breakdown of the Quantum Hall Effect
  • Determination of the Fine Structure Constant Based on the Quantum Hall Effect
  • Quantized Hall Resistivity in Si-MOSFETs Measured at Liq.^3He Temperatures
  • Superconductivity in InAs Surfaces
  • Effect of Residual Stress on Hole Mobility of SOS MOS Devices
  • Piezoresistance and Piezo-Hall Effect in Heavily Doped n-Type Silicon
  • Magnetic Anomaly in the Metallic Impurity Conduction
  • Piezoresistance and Magnetic Susceptibility in Heavily Doped n-Type Silicon
  • Influence of Crystalline Defects and Residual Stress on the Electrical Characteristics of SOS MOS Devices
  • Far-Infrared Photoconductivity in Phosphorus Doped n-Type Silicon in the Intermediate Impurity Concentration Region under Uniaxial Compressional Stress
  • Mobility Hump and Inversion Layer Subbands in Si on Sapphire
  • Electric Field Dependence of Junction Paraconductivity
  • A.C. and D.C. Field Effects on Cleaned Germanium Surfaces
  • Analysis of Telnperature Dependent Hall Conductivity in Silicon Inversion Layers in Strong Magnetic Fields by a Mobility Edge Model
  • Quantum Galvanomagnetic Effect in n-Channel Silicon Inversion Layers under Strong Magnetic Fields (Selected Topics in Semiconductor Physics) -- (Surface)
  • Hall Effect in Sillicon Inversion Layers under Strong Magnetic Fields
  • Hall Current Measurement under Strong Magnetic Fields for Silicon MOS Inversion Layers
  • Hall Effect in Silicon MOS Inversion Layers under Strong Magnetic Fields
  • Energy Relaxation Process in n-Type InSb under Strong Longitudinal Magnetic Fields
  • Electric Conduction in Phosphorus Doped Silicon at Low Temperatures
  • Note on the Magnetoresistance in Dilute Magnetic Alloys
  • Experiments on the Critical Exponent of Localization in Landau Subbands with the Landau Quantum Numbers 0 and 1 in Si-MOS Inversion Layers
  • Experimental Correlation between Diagonal and Hall Conductivities of Silicon MOS inversion Layers in Strong Magnetic Fields
  • Second Activation Energy in the Fractional Quantum Hall Effect
  • Valley Splitting in Si(100)n-Channel Inversion Layers Determined by a Tilted Field Method
  • Collapse of the Quantised Hall Resistance and Role of the Diagonal Resistivity in the Quantum Hall Effect(Condensed Matter : Electronic Structure, Electrical, Magnetic and Optical Properties)
  • Experiments on Scaling Relation of Conductivities in Silicon MOS Inversion Layers in Strong Magnetic Fields
  • Anderson Localization in Silicon MOS Inversion Layers at Low Densities
  • Anisotropy of the Superconducting Energy Gap of Gallium Single Crystal Obtained from Tunneling Experiments
  • The Temperature Dependence of the Superconducting Energy Gap of Gallium Single Crystal Obtained from Tunneling Measurements
  • On the Anomalous Magnetoresistance Erect in n-InSb
  • Hall Coefficient and Resistivity in the Intermediate Impurity Conduction of n-Type Germanium
  • Negative Magnetoresistance and Inelastic Scattering Time in Si-MOS Inversion Layers
  • Anomalous Magnetoresistance of Clean Cleaved Surfaces in InAs
  • Spin-Orbit Interaction in Two Dimensiomal Systems in InAs n-Inversion Layers
  • Magnetoresistance in the Impurity Conduction of n-type Germanium
  • Experimental researches on quantum transport in semiconductor two-dimensional electron systems
  • Surfons and the Electron Mobility in Silicon Inversion Layers
  • Anomalous Magnetoresistance in the Field Parallel to the Interface in Si-MOS Inversion Layers
  • Angular Distribution Measurements of Photoemitted Electrons for InAs by Means of Magnetic Field
  • Experiments on Localization in Semiconductor Two-Dimensional Systems
  • Negative Magnetoresistance in Silicon (100) MOS Inversion Layers
  • Absorption of Sub-mm Radiation in Antimony Doped Germanium in the Matallic Type Impurity Conduction Region
  • Temperature Dependence of Negative Longitudinal Magnetoresistance in n-Type Indium Antimonide
  • Far Infrared Photoconductiviy in Antimony Doped Germanium in the Intermediate Impurity Concentration Region
  • Negative Longitudinal Magnetoresistance in n-Type Indium Antimonide at 77K
  • Absorption of Sub-mm Radiation in Antimony Doped Germanium in the Intermediate Impurity Concentration Region
  • Effects of the Magnetic Field on the Intermediate Impurity Conduction in n-Type Germanium
  • A Study of Electron Mobility and Electron-Phonon Interaction in Si MOSFETs by Negative Magnetoresistance Experiments
  • The Two-Dimensional Lattice Scattering Mobility in a Semiconductor Inversion Layer
  • Evaluation of a Quantum Hall Effect System of Small Size for Use as Resistance Standard
  • Possible Ring-Exchange Interaction and Aharonov-Bohm Effect in Two-Dimensional Electron Solids
  • Anisotropy of the Superconducting Energy Gap of Gallium Single Crystal Determined by Tunneling
  • Magnetoresistance in the Impurity Conduction of n-Type Germanium
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