Mobility Hump and Inversion Layer Subbands in Si on Sapphire
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概要
- 論文の詳細を見る
An anisotropy and a hump are observed in electron mobility versus gate voltage curves in n-channel MOS inversion layers on (001)Si/(l^^-012)Al_2O_3 films below 4.2 K. The results can be explained by a change in the subband strucre with strain-induced anisotropic valley configuration in a deep inversion layer potential.
- 社団法人日本物理学会の論文
- 1976-09-15
著者
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Nakamura Koichi
Department of Material Physics, Faculty of Engineering Science, Osaka University
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ONGA Shinji
Toshiba Research and Development Center
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Kawaji Shinji
Gakushuin University
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Kawaji Shinji
Department Of Physics And Chemistry Gakushuin University
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Onga Shinji
Enginerring Design Center Case Western Reserve University
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Hatanaka Katunori
Department Of Physics Gakushuin University
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HATANAKA Katsunori
Department of Physics, Gakushuin University
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Nakamura Koichi
Department Of Clinical Pharmacology And Therapeutics Oita University Faculty Of Medicine
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Nakamura Koichi
Department of Chemistry, Faculty of Science, Hokkaido University
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