Influence of Crystalline Defects and Residual Stress on the Electrical Characteristics of SOS MOS Devices

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概要

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• Carrier mobility, threshold voltage and drain leakage current are investigated for MOS devices fabricated on (001)Si on (1012) sapphire substrates with special emphasis on crystalline defects and residual stress in silicon films. Mobility anisotropies which are ascribed to electron mass anisotropies caused by lateral compressive stress in SOS are observed in E-type and D-type MOS devices in the temperature range from 1.4 to 300 K. Moreover, mobility humps which resulted from marked changes in the electron configuration among energy valleys are found on <μ_H>-V_G curves at 1.4 and 4.2 K in the devices with a certain combination of silicon film thickness and channel directions. This can be explained by changes in conductivity-effective-mass and surface roughness scattering. In deep D-type MOS devices, the scattering due to space charge regions around dislocations is found to be predominant over other carrier scattering processes from results on the in-depth distribution of Hall mobility and carrier concentration.

• 社団法人応用物理学会の論文
• 1978-02-05

著者

• Yasuda Yukio

  Toshiba Research And Development Center Tokyo Shibaura Electric Co. Ltd.

• ONGA Shinji

  Toshiba Research and Development Center

• KAWAJI Shinji

  Department of Physics,Gakushuin University

• Kawaji Shinji

  Gakushuin University

• Kawaji Shinji

  Department Of Physics And Chemistry Gakushuin University

• Onga Shinji

  Enginerring Design Center Case Western Reserve University

• Hatanaka Katunori

  Department Of Physics Gakushuin University

• HATANAKA Katsunori

  Department of Physics, Gakushuin University

関連論文

• Characterization of Polycrystalline Silicon MOS Transistors and Its Film Properties. I
• Resistivity Reduction of Polycrystalline Silicon Film by Laser Annealing : A-3: LASER ANNEALING/SOS DEVICES
• Localization in Landau Subbands with the Landau Quantum Number 0 and 1 of Si-MOS Inversion Layers
• Fractional Quantum Hall Effect at ν=1/7
• Localization and Quantum Hall Effect in Two-Dimensional Systems Under Strong Magnetic Fields(Transport and Fermiology)
• Phase Boundaries between Quantum Hall Metal and Hall Insulator in Si-MOSFET's and Many-Body Enhancement of Valley- and Zeeman-Splitting
• Effects of Tailing of Density of State on the Mobility of Si-MOSFETs at Low Temperatures : A Proposal for the Method of Characterization of Si-SiO_2 Interfaces
• Breakdown of the Quantum Hall Effect in GaAs/AlGaAs Heterostructures Due to Current
• Collapse of Quantized Hall Resistance and Breakdown of IQHE in GaAs/AlGaAs Heterostructures
• Temperature Dependence of Collapse of Quantized Hall Resistance(Condensed Matter : Electronic Structure, Electrical, Magnetic and Optical Properties)
• Effects of Light and Temperature on the Growth of Silicon Stain Films
• Deep Trap Levels in Silicon P-N Junctions
• Activation Energies of the Fractional Quantum Hall Effect in GaAs/AlGaAs Heterostructures
• Anomalous Magnetoresistance in Perpendicular Magnetic Fields Observed in High Mobility GaAs/Al_xGa_As Interfaces
• Activation Energies of the 1/3 and 2/3 Fractional Quantum Hall Effect in GaAs/Al_xGa_As Heterostructures
• Negative Magnetoresistance and Inelastic Scattering Time in Two-Dimensional Electron Systems in GaAs/Al_xGa_As Heterojunction Interfaces
• Electron Concentration and Mobility Dependence of Breakdown of the Quantum Hall Effect
• Determination of the Fine Structure Constant Based on the Quantum Hall Effect
• Quantized Hall Resistivity in Si-MOSFETs Measured at Liq.^3He Temperatures
• Superconductivity in InAs Surfaces
• Effect of Residual Stress on Hole Mobility of SOS MOS Devices
• Effects of Crystalline Defects on Electrical Properties in Silicon Films on Sapphire
• Influence of Crystalline Defects and Residual Stress on the Electrical Characteristics of SOS MOS Devices
• Electrical Characteristics of Depletion-Type SOS MOS Devices
• Mobility Hump and Inversion Layer Subbands in Si on Sapphire
• A.C. and D.C. Field Effects on Cleaned Germanium Surfaces
• Analysis of Telnperature Dependent Hall Conductivity in Silicon Inversion Layers in Strong Magnetic Fields by a Mobility Edge Model
• Quantum Galvanomagnetic Effect in n-Channel Silicon Inversion Layers under Strong Magnetic Fields (Selected Topics in Semiconductor Physics) -- (Surface)
• Hall Effect in Sillicon Inversion Layers under Strong Magnetic Fields
• Hall Current Measurement under Strong Magnetic Fields for Silicon MOS Inversion Layers
• Hall Effect in Silicon MOS Inversion Layers under Strong Magnetic Fields
• Epitaxial Growth of Silicon Films on Sapphire and Spinel by Vacuum Evaporation
• Experiments on the Critical Exponent of Localization in Landau Subbands with the Landau Quantum Numbers 0 and 1 in Si-MOS Inversion Layers
• Experimental Correlation between Diagonal and Hall Conductivities of Silicon MOS inversion Layers in Strong Magnetic Fields
• Second Activation Energy in the Fractional Quantum Hall Effect
• Valley Splitting in Si(100)n-Channel Inversion Layers Determined by a Tilted Field Method
• Collapse of the Quantised Hall Resistance and Role of the Diagonal Resistivity in the Quantum Hall Effect(Condensed Matter : Electronic Structure, Electrical, Magnetic and Optical Properties)
• Experiments on Scaling Relation of Conductivities in Silicon MOS Inversion Layers in Strong Magnetic Fields
• Anderson Localization in Silicon MOS Inversion Layers at Low Densities
• Negative Magnetoresistance and Inelastic Scattering Time in Si-MOS Inversion Layers
• Anomalous Magnetoresistance of Clean Cleaved Surfaces in InAs
• Spin-Orbit Interaction in Two Dimensiomal Systems in InAs n-Inversion Layers
• Experimental researches on quantum transport in semiconductor two-dimensional electron systems
• Surfons and the Electron Mobility in Silicon Inversion Layers
• Anomalous Magnetoresistance in the Field Parallel to the Interface in Si-MOS Inversion Layers
• Angular Distribution Measurements of Photoemitted Electrons for InAs by Means of Magnetic Field
• Experiments on Localization in Semiconductor Two-Dimensional Systems
• Negative Magnetoresistance in Silicon (100) MOS Inversion Layers
• A Study of Electron Mobility and Electron-Phonon Interaction in Si MOSFETs by Negative Magnetoresistance Experiments
• The Two-Dimensional Lattice Scattering Mobility in a Semiconductor Inversion Layer
• Possible Ring-Exchange Interaction and Aharonov-Bohm Effect in Two-Dimensional Electron Solids

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