Epitaxial Growth of Silicon Films on Sapphire and Spinel by Vacuum Evaporation

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概要

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• Single-crystal silicon films are formed on (101, 2) and (112, 0) sapphire and also on (111), (001) and (113) spinel surfaces by evaporation in a vacuum of 2×10^<-6> Torr. The growth process of these single-crystal films is studied by reflection electron diffraction. The initial deposits on sapphire contain a few orientations, and further deposition leads to the eventual predominance of one orientation. The initial deposits on spinel consist of only one orientation parallel to the substrate orientation, and no orientationchange occurs during film growth. A feature in the growth of silicon on these substrates is found to be the growth of the (110) fibrous structure at lower substrate temperatures.

• 社団法人応用物理学会の論文
• 1971-01-05

著者

• Yasuda Yukio

  Toshiba Research And Development Center Tokyo Shibaura Electric Co. Ltd.

関連論文

• Effect of Residual Stress on Hole Mobility of SOS MOS Devices
• Effects of Crystalline Defects on Electrical Properties in Silicon Films on Sapphire
• Influence of Crystalline Defects and Residual Stress on the Electrical Characteristics of SOS MOS Devices
• Epitaxial Growth of Silicon Films on Sapphire and Spinel by Vacuum Evaporation

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