Effects of Crystalline Defects on Electrical Properties in Silicon Films on Sapphire
スポンサーリンク
概要
著者
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Yasuda Yukio
Toshiba Research And Development Center Tokyo Shibaura Electric Co. Ltd.
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: A-7:
Siemens Ag Research Laboratories
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Yoshii Toshio
Toshiba Research And Development Center Tokyo Shibawa Electric Co. Ltd.
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: A-7:
Toshiba Research and Development Center, Tokyo Shibawa Electric Co., Ltd.
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HATANAKA Katsunori
Faculty of Science, Gakushuin University
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Yasuda Yukio
Toshiba Research And Development Center Tokyo Shibawa Electric Co. Ltd.
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Hatanaka Katsunori
Faculty Of Science Gakushuin University
関連論文
- Effect of Residual Stress on Hole Mobility of SOS MOS Devices
- Effects of Crystalline Defects on Electrical Properties in Silicon Films on Sapphire
- Influence of Crystalline Defects and Residual Stress on the Electrical Characteristics of SOS MOS Devices
- Thin Film Evaluation Techniques for the ESFI SOS Technology
- Magnetoresistance and the Electronic Structure of Si on Sapphire
- Threshold Voltage Engineering with ESFI SOS MOST's
- Epitaxial Growth of Silicon Films on Sapphire and Spinel by Vacuum Evaporation