Anomalous Magnetoresistance in Perpendicular Magnetic Fields Observed in High Mobility GaAs/Al_xGa_<1-x>As Interfaces
スポンサーリンク
概要
- 論文の詳細を見る
An anomalous magnetoresistance in perpendicular magnetic fields B is foundin 2DEG of GaAs/AI..Gan -,.As interfaces in the fields UP to 0.015 T and at tem-peratures between 4.2 K and 1.1 K. The magnetoresistance consists of a negativer>art r>ror>ortionat to n' and a positive part which saturates at high fields.
- 社団法人日本物理学会の論文
- 1985-10-15
著者
-
Yoshino J
Tokyo Inst. Technology Tokyo
-
Yoshino Junji
Institute Of Industrial Science University Of Tokyo
-
KAWAJI Shinji
Department of Physics,Gakushuin University
-
SAKAKI Hiroyuki
Institute of Industrial Science,University of Tokyo
-
Sakaki H
Univ. Tokyo Tokyo Jpn
-
Kawaji Shinji
Department Of Physics And Chemistry Gakushuin University
-
Sakaki Hiroyuki
Institute Of Industrial Science University Of Tokyo
-
SHIGENO Hiroyuki
Department of Physics,Gakushuin University
-
Sakaki Hiroyuki
Institute Of Industrial Science The University Of Tokyo
関連論文
- Localization in Landau Subbands with the Landau Quantum Number 0 and 1 of Si-MOS Inversion Layers
- Fractional Quantum Hall Effect at ν=1/7
- Reduced Phonon Scattering in an Asymmetric Triple Barrier Resonant-Tunneling Diode at High Magnetic Fields(Condensed matter: electronic structure and electrical, magnetic, and optical properties)
- Fabrication of 10-Nanometer-scale GaAs Dot Structures by In Situ Selective Gas Etching with Self-Assembled InAs Dots as a Mask
- High-Resolution Transmission Electron Microscopy of AlAs/GaAs Imterfacial Structure in the Projection
- Localization and Quantum Hall Effect in Two-Dimensional Systems Under Strong Magnetic Fields(Transport and Fermiology)
- Phototransistors Using Point Contact Structures
- Phototransistors Using Point Contact Structures
- Direct Observation of Electron Jet from a Point Contact
- Molecular Beam Epitaxial Growth of InGaAs Quantum Welts on (110) GaAs Surfaces
- Effect of Intense Intersubband Optical Excitation on the Electron Distribution in GaAs/AlAs Quantum Wells
- Etching of InAs in HCl Gas and Selective Removal of InAs Layer on GaAs in Ultrahigh-Vacuum Processing System
- Surface Smoothness and Step Bunching on GaAs (111)B Facets Formed by Molecular Beam Epitaxy
- Formation of Two-Dimensional Electron Gas in N-AlGaAs/GaAs Heterojunctions on (111)B Microfacets Grown by Molecular Beam Epitaxy on a Patterned (001) Substrate
- Magnetophonon Resonance in a Two-Dimensional Electron System in the GaAs-Al_xAs Heterojunction Interface
- Spontaneous Emission Characteristics of Quantum Well Lasers in Strong Magnetic Fields : An Approach to Quantum-Well-Box Light Source
- Phase Boundaries between Quantum Hall Metal and Hall Insulator in Si-MOSFET's and Many-Body Enhancement of Valley- and Zeeman-Splitting
- Effects of Tailing of Density of State on the Mobility of Si-MOSFETs at Low Temperatures : A Proposal for the Method of Characterization of Si-SiO_2 Interfaces
- Breakdown of the Quantum Hall Effect in GaAs/AlGaAs Heterostructures Due to Current
- Control of Current Hysteresis Effects in a GaAs/n-AlGaAs Quantum Trap Field Effect Transistor with Embedded InAs Quantum Dots
- Kelvin Probe Force Microscopy on InAs Thin Films on (110) GaAs Substrates
- Angular Dependent Magnetoresistance Oscillation in GaAs/Al_xGa_As Superalttice
- Collapse of Quantized Hall Resistance and Breakdown of IQHE in GaAs/AlGaAs Heterostructures
- Temperature Dependence of Collapse of Quantized Hall Resistance(Condensed Matter : Electronic Structure, Electrical, Magnetic and Optical Properties)
- Splitting of Photoluminescence Spectra and Negative Differential Resistance Caused by the Electric Field Induced Resonant Coupling of Quantized Levels in GaAs-AlGaAs Multi-Quantum Well Structures
- Electronic States in Edge Quantum Wires on GaAs/AlGaAs Facet Structures
- Effects of Light and Temperature on the Growth of Silicon Stain Films
- MBE Growth and Properties of AlGaAs/GaAs/AlGaAs Selectively-Doped Double-Heterojunction Structures with Very High Conductivity
- Deep Trap Levels in Silicon P-N Junctions
- Activation Energies of the Fractional Quantum Hall Effect in GaAs/AlGaAs Heterostructures
- Anomalous Magnetoresistance in Perpendicular Magnetic Fields Observed in High Mobility GaAs/Al_xGa_As Interfaces
- Activation Energies of the 1/3 and 2/3 Fractional Quantum Hall Effect in GaAs/Al_xGa_As Heterostructures
- Negative Magnetoresistance and Inelastic Scattering Time in Two-Dimensional Electron Systems in GaAs/Al_xGa_As Heterojunction Interfaces
- Atomic-Scale Structures of Top and Bottom Heterointerfaces in GaAs-Al_xGa_As (x=0.2-1) Quantum Wells Prepared by Molecular Beam Epitaxy with Growth Interruption
- One Atomic Layer Heterointerface Fluctuations in GaAs-AlAs Quantum Well Structures and Their Suppression by Insertion of Smoothing Period in Molecular Beam Epitaxy
- Electron Concentration and Mobility Dependence of Breakdown of the Quantum Hall Effect
- Determination of the Fine Structure Constant Based on the Quantum Hall Effect
- Quantized Hall Resistivity in Si-MOSFETs Measured at Liq.^3He Temperatures
- Effect of Ionized Impurities at Heterointerface on Concentration and Mobility of Two-Dimensional Electrons in Selectively Doped Heterojunction Structures
- Superconductivity in InAs Surfaces
- Effect of Residual Stress on Hole Mobility of SOS MOS Devices
- Structural Evaluation of GaAs/AlGaAs Heterointerfaces by Atomic-Resolution Electron Micrograph with Clear Contrast
- Influence of Crystalline Defects and Residual Stress on the Electrical Characteristics of SOS MOS Devices
- Carrier Concentration Dependent Absorption Spectra of Modulation Doped n-AlGaAs/GaAs Quantum Wells and Performance Analysis of Optical Modulators and Switches Using Carrier Induced Bleaching (CIB) and Refractive Index Change (CIRIC)
- Mobility Hump and Inversion Layer Subbands in Si on Sapphire
- Formation of Ultra-low Density (${\leq}10^{4}$ cm-2) Self-Organized InAs Quantum Dots on GaAs by a Modified Molecular Beam Epitaxy Method
- A.C. and D.C. Field Effects on Cleaned Germanium Surfaces
- Schottky-Barrier Properties of Nearly-Ideal (n≃1) Al Contacts on MBE- and Heat Cleaned-GaAs Surfaces
- Analysis of Telnperature Dependent Hall Conductivity in Silicon Inversion Layers in Strong Magnetic Fields by a Mobility Edge Model
- Effects of Dephasing and Dissipation on Nonequilibrium Quantum Noise
- Quantum Galvanomagnetic Effect in n-Channel Silicon Inversion Layers under Strong Magnetic Fields (Selected Topics in Semiconductor Physics) -- (Surface)
- Hall Effect in Sillicon Inversion Layers under Strong Magnetic Fields
- Hall Current Measurement under Strong Magnetic Fields for Silicon MOS Inversion Layers
- Hall Effect in Silicon MOS Inversion Layers under Strong Magnetic Fields
- Precise Control of Resonant Tunneling Current in AlAs/GaAs/AlAs Double Barrier Diodes with Atomically-Controlled Barrier Widths
- Room Temperature Observation of Differential Negative Resistance in an AlAs/GaAs/AlAs Resonant Tunneling Diode
- A New AlGaAs/GaAs Heterojunction FET with Insulated Gate Structure (MISSFET)
- An Integrated Photodetector Using the Partially Metal-Clad-Dielectric-Slab Waveguide Structure : B-7: SEMICONDUCTOR LASERS (II)
- MBE Growth and Optical Properties of Novel Corrugated-Interface Quantum Wells : Surfaces, Interfaces and Films
- Tunneling Spectroscopy of Resonant Transmission Coefficient in Double Barrier Structure
- Properties of Deep Levels in ZnO Varistors and Their Effect on Current-Response Characteristics
- Velocity-Modulation Transistor (VMT) : A New Field-Effect Transistor Concept
- Scattering Suppression and High-Mobility Effect of Size-Quantized Electrons in Ultrafine Semiconductor Wire Structures
- Experiments on the Critical Exponent of Localization in Landau Subbands with the Landau Quantum Numbers 0 and 1 in Si-MOS Inversion Layers
- Experimental Correlation between Diagonal and Hall Conductivities of Silicon MOS inversion Layers in Strong Magnetic Fields
- Second Activation Energy in the Fractional Quantum Hall Effect
- Valley Splitting in Si(100)n-Channel Inversion Layers Determined by a Tilted Field Method
- Collapse of the Quantised Hall Resistance and Role of the Diagonal Resistivity in the Quantum Hall Effect(Condensed Matter : Electronic Structure, Electrical, Magnetic and Optical Properties)
- Experiments on Scaling Relation of Conductivities in Silicon MOS Inversion Layers in Strong Magnetic Fields
- Anderson Localization in Silicon MOS Inversion Layers at Low Densities
- Negative Magnetoresistance and Inelastic Scattering Time in Si-MOS Inversion Layers
- Anomalous Magnetoresistance of Clean Cleaved Surfaces in InAs
- Spin-Orbit Interaction in Two Dimensiomal Systems in InAs n-Inversion Layers
- Experimental researches on quantum transport in semiconductor two-dimensional electron systems
- Surfons and the Electron Mobility in Silicon Inversion Layers
- Anomalous Magnetoresistance in the Field Parallel to the Interface in Si-MOS Inversion Layers
- Angular Distribution Measurements of Photoemitted Electrons for InAs by Means of Magnetic Field
- Experiments on Localization in Semiconductor Two-Dimensional Systems
- Negative Magnetoresistance in Silicon (100) MOS Inversion Layers
- A Study of Electron Mobility and Electron-Phonon Interaction in Si MOSFETs by Negative Magnetoresistance Experiments
- The Two-Dimensional Lattice Scattering Mobility in a Semiconductor Inversion Layer
- Direct Observation of Electron Jet from a Point Contact
- Self-Assembled Growth of GaSb Type II Quantum Ring Structures
- Possible Ring-Exchange Interaction and Aharonov-Bohm Effect in Two-Dimensional Electron Solids
- A New Highly-Conductive (AlGa)As/GaAs/(AlGa)As Selectively-Doped Double-Heterojunction Field-Effect Transistor (SD-DH-FET)
- Reduced Phonon Scattering in an Asymmetric Triple Barrier Resonant-Tunneling Diode at High Magnetic Fields(Condensed matter: electronic structure and electrical, magnetic, and optical properties)