Structural Evaluation of GaAs/AlGaAs Heterointerfaces by Atomic-Resolution Electron Micrograph with Clear Contrast
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概要
- 論文の詳細を見る
Transmission electron microscopy observation was made on GaAs/AlGaAs heterostructures which were grown on (001) GaAs by molecular beam epitaxy. A lattice image with a clear contrast was obtained for the first time. It was found that heterostructures were free from crystal defect both in layers and at interface. By performing a digital image analysis on lattice image, the compositional grading and/or the height of interface roughness were estimated and found to be less than ±1.25 atomic layers.
- 社団法人応用物理学会の論文
- 1984-05-20
著者
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SAKAKI Hiroyuki
Institute of Industrial Science,University of Tokyo
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ICHINOSE Hideki
Institute of Industrial Science, University of Tokyo
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ISHIDA Yoichi
Institute of Industrial Science, University of Tokyo
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Furuta Tomofumi
Institute Of Industrial Science University Of Tokyo
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Onoe Morio
Institute Of Industrial Science University Of Tokyo
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Ishida Yoichi
Institute Of Industrial Science University Of Tokyo
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Ichinose Hideki
Institute Of Industrial Science University Of Tokyo
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Sakaki Hiroyuki
Institute Of Industrial Science University Of Tokyo
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SONE Mitsuo
Institute of Industrial Science, University of Tokyo
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Sone Mitsuo
Institute Of Industrial Science University Of Tokyo
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Sakaki Hiroyuki
Institute Of Industrial Science The University Of Tokyo
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