Negative Magnetoresistance and Inelastic Scattering Time in Two-Dimensional Electron Systems in GaAs/Al_xGa_<1-x>As Heterojunction Interfaces
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概要
- 論文の詳細を見る
Angular dependence and temperature dependence of negative magnetoresistancein two-dimensional electron gas in GaAs/AN,Ga.=,As (,v:0.3) heterostructureare measured at temperatures between 4.2 K and 1.1 K. The temperature de-pendence of T. is analysed by a theory developed recently by Fukuyama andAbrahams. The experimental r7" in the dirty limit is smaller than the theoreticalone by a factor of ].5x2.3.
- 社団法人日本物理学会の論文
- 1984-02-15
著者
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Yoshino J
Tokyo Inst. Technology Tokyo
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Yoshino Junji
Institute Of Industrial Science University Of Tokyo
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KAWAJI Shinji
Department of Physics,Gakushuin University
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SAKAKI Hiroyuki
Institute of Industrial Science,University of Tokyo
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Sakaki H
Univ. Tokyo Tokyo Jpn
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Kawaji Shinji
Department Of Physics And Chemistry Gakushuin University
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Sakaki Hiroyuki
Institute Of Industrial Science University Of Tokyo
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NAMBU Toshiaki
Department of Physics,Gakushuin University
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KUBOKI Keiju
Department of Physics,Gakushuin University
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KAWAGUCHI Yoichi
Gakushuin Women's Junior College
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Kuboki Keiju
Department Of Physics Gakushuin University
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Nambu Toshiaki
Department Of Physics Gakushuin University:sony Corporation.
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Kawaguchi Yoichi
Gakushuin Women's Junior College
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Sakaki Hiroyuki
Institute Of Industrial Science The University Of Tokyo
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